Threshold Current Density of Electromigration Damage in Angled Polycrystalline Line
As silicon ICs continue to scale down, several reliability issues have emerged. Electromigration- the transportation of metallic atoms by the electron wind- has been recognized as one of the key damage mechanisms in metallic interconnects. It is known that there is a threshold current density of electromigration damage in via-connected lines. The evaluation of the threshold current density is a matter of the great interest from the viewpoint of IC reliability. In this study, Al polycrystalline lines with two-dimensional shape, i.e. angled lines are experimentally treated for the evaluation. Comparing the experimental result with that of straight-shaped line, the effect of line-shape on the threshold current density of electromigration damage is discussed.
Yu Zhou, Shan-Tung Tu and Xishan Xie
K. Sasagawa et al., "Threshold Current Density of Electromigration Damage in Angled Polycrystalline Line", Key Engineering Materials, Vols. 353-358, pp. 2958-2961, 2007