Hardness and Elastic Modulus of ZnO Thin Films Fabricated by PLD Method

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ZnO is an n-type semiconductor having a hexagonal wurzite structure. ZnO exhibits good piezoelectric and optical properties, and might be a good candidate for an electroluminescence device like an UV laser diode. Then, these devices are very small, their films are very thin and they are prepared in the limited size and shape, so they are unsuitable for the extensive mechanical testing. In this present work, ZnO thin films are prepared on the glass, GaAs(100), Si(100) and Si(111) substrates at various temperatures by the pulsed laser deposition (PLD) method. ZnO thin films were evaluated by X-ray diffraction (XRD) and mechanical properties such as hardness and elastic modulus were measured through the nano-indenter.

Info:

Periodical:

Key Engineering Materials (Volumes 353-358)

Edited by:

Yu Zhou, Shan-Tung Tu and Xishan Xie

Pages:

2966-2969

Citation:

H. K. Yoon and Y. S. Yu, "Hardness and Elastic Modulus of ZnO Thin Films Fabricated by PLD Method", Key Engineering Materials, Vols. 353-358, pp. 2966-2969, 2007

Online since:

September 2007

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$38.00

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[20] [40] [60] [80] 100 120 140 160 180 Elastic modulus (GPa) Substrate Applied Load 1g 10g G lass GaAs(100) Si(111) Si(100).

[2] [4] [6] [8] [10] [12] Hardness (GPa) Substrate Applied Load 1g 10g (A) (B) Glass GaAs(100) Si(111) Si(100).

[20] [40] [60] [80] 100 120 140 160 180 Elastic modulus (GPa) Substrate Applied Load 1g 10g G lass GaAs(100) Si(111) Si(100).

[2] [4] [6] [8] [10] [12] Hardness (GPa) Substrate Applied Load 1g 10g Glass GaAs(100) Si(111) Si(100).

[20] [40] [60] [80] 100 120 140 160 180 Elastic modulus (GPa) Substrate Applied Load 1g 10g G lass GaAs(100) Si(111) Si(100).

[2] [4] [6] [8] [10] [12] Hardness (GPa) Substrate Applied Load 1g 10g (A) (B) Fig. 5. Mechanical properties such as elastic modulus (A) and hardness (B) of different substrate on applied load 1g, 10g.