Effect of the Annealing Temperature on Dielectric Properties of Bi1.5Zn1.0Nb1.5O7 Films Prepared by MOCVD

Hiroshi Funakubo; Shingo Okaura; Muneyasu Suzuki; Hiroshi Uchida; Seiichiro Koda

doi:10.4028/www.scientific.net/KEM.388.175

Paper Titles

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Effect of Gel-Films-Thickness and Sintering Conditions on the Crystal Structure and Microstructure of Alkoxy-Derived BaTiO₃ Thin Films
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Effect of the Annealing Temperature on Dielectric Properties of Bi_1.5Zn_1.0Nb_1.5O₇ Films Prepared by MOCVD
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Preparation of Epitaxial LiNbO₃ Thin Film by MOCVD and its Properties
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Analysis of Nonlinear Dielectric Characteristics of (Ba, Sr)TiO₃ Thin Films and their Frequency Conversion Application
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Effect of the Annealing Temperature on Dielectric Properties of Bi_1.5Zn_1.0Nb_1.5O₇ Films Prepared by MOCVD

Abstract:

Effect of annealing temperature on the dielectric properties of Bi1.5Zn1.0Nb1.5O7 films prepared on (111)Pt//(001)Al2O3 and (111)Pt/fused silica substrates by MOCVD was investigated. The tunability and the inverse of the dielectric loss [1/ (tan )] increased with increasing annealing temperature. Relative dielectric constant and temperature coefficient of the capacitance (TCC) increased with the crystallinity of the films. On the other hand, (1/tan ) was independent of the crystallinity of the films, but was dramatically increased by the annealing.