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The Influence of Annealing Treatment on Physics and Electrical Characteristics of Ba(Zr0.1Ti0.9)O3 Ferroelectric Films on ITO/Glass Substrate

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Abstract:

Perovskite Ba(Zr0.1Ti0.9)O3 (BZ1T9) ferroelectric thin films well deposited on ITO/glass substrates for applications in system-on-panel (SOP) devices are produced and investigated. The sputtering parameters of as-deposited BZ1T9 thin films were rf power of 160 W, chamber pressure of 10 mTorr, substrate temperature of 550oC, and an oxygen concentration of 40%. From the SEM cross- sectional observation, the deposition rate were about 2.5 nm/min. Additionally, the maximum dielectric constant and leakage current density of annealed BZT films under the rapid temperature annealing would be increased, as the temperature increased to 6500C. Further, the maximum remnant polarization and coercive field of BZT films were found and calculated from the p-E curves.

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Periodical:

Key Engineering Materials (Volumes 434-435)

Pages:

289-292

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.434-435.289

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Online since:

March 2010

Authors:

Wen Cheng Tzou, Chien Min Cheng, Kai Huang Chen, Hung Chi Yang, Guan Hung Shen, Cheng Fu Yang

Keywords:

Ba(Zr0.1Ti0.9)O3, FeRAM, Ferroelectric, ITO/Glass, Perovskite Structure

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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