Ferroelectric Properties and Microstructures of Pr₆O₁₁-Doped Bi₄Ti₃O₁₂ Thin Films

Abstract:

Pr6O11-doped bismuth titanate (BixPryTi3O12: BPT) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BPT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with y=0.06, 0.3, 1.2 and 1.5, ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with y=0.6 and 0.9, ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Film with y=0.9 were above 35μC/cm2 and 80KV/cm , respectively. After 3×1010 switching cycles, 20% degradation of 2Pr is observed in the film with y=0.9.

• Periodical: Key Engineering Materials (Volumes 434-435)
• Pages: 281-284
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.434-435.281
• Online since: March 2010
• Authors: Min Chen, A.H. Cai, X.A. Mei, K.L. Su, Chong Qing Huang, Z.M. Wan, J. Liu
• Keywords: Bismuth Titanate, Ferroelectric, Film

References

[1] J. F. Scott: Science Vol. 315 (2007), p.954.

[2] B. H. Part, B. S. Kang, S. D. Bu et al: Nature Vol. 401 (1999), p.682.

[3] H. N. Lee, D. Hesse, H. Zakharov et al: Science Vol. 296 (2002), p. (2006).

[4] S. Y. Chen, B. C. Lan and C. S. Taso: Thin solid films Vol. 422 (2002), p.186.

[5] Z. H. Bao, Y. Y. Yao, J. S. Zhu et al: Materials Letters Vol. 56 (2002), p.861.

[6] W. Wang, J. Zhu and X. Y. Mao: Mater. Res. Bull. Vol. 42 (2007), p.274.

[7] A. Z. Simoes., C. Quinelato, A. ries et al: Mater. Chemistry and Phys. Vol. 98 (2006), p.481.

[8] Y. C. Cheng and D. H. Kuo: Thin Solid Films Vol. 515 (2006), p.1683.

[9] D. Wu, A. D. Li, and N. B. Ming: Appl. Phys. Lett. Vol. 84 (2004), p.4505.

[10] M. Chen, Z. L. Liu, Y. Wang et al: Phys. Stat. Sol. (a) Vol. 202 (2005), p.1166.

[11] U. Chon, K. B. Kim, H. M. Jang et al: Appl. Phys. Lette. Vol. 79 (2001), p.3137.

[12] M. Chen, Y. H. Sun, K. L. Su et al: Key Eng. Mater. Vol. 336-338 (2007), p.155.

[13] Z. L. Liu, C. C. Wang, M. Chen et al: Mater. Lett. Vol. 58 (2004), p.3648.

[14] M. Chen, Y. Wang, Z. L. Liu et al: Chin. Phys. Lett. Vol. 21 (2004), p.1811.

[15] Y. Noguchi and M. Miyayama: Appl. Phys. Lett. Vol. 78 (2001), p. (1903).

[16] A. Huchid, H. Yoshikawa, I. okada et al: Appl. Phys. Lett. Vol. 81 (2002), p.2229.