Ferroelectric Properties and Microstructures of Pr6O11-Doped Bi4Ti3O12 Thin Films

Abstract:

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Pr6O11-doped bismuth titanate (BixPryTi3O12: BPT) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BPT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with y=0.06, 0.3, 1.2 and 1.5, ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with y=0.6 and 0.9, ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Film with y=0.9 were above 35μC/cm2 and 80KV/cm , respectively. After 3×1010 switching cycles, 20% degradation of 2Pr is observed in the film with y=0.9.

Info:

Periodical:

Key Engineering Materials (Volumes 434-435)

Edited by:

Wei Pan and Jianghong Gong

Pages:

281-284

DOI:

10.4028/www.scientific.net/KEM.434-435.281

Citation:

M. Chen et al., "Ferroelectric Properties and Microstructures of Pr6O11-Doped Bi4Ti3O12 Thin Films", Key Engineering Materials, Vols. 434-435, pp. 281-284, 2010

Online since:

March 2010

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$35.00

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