Bi4Ti3O12 and Bi3.25La0.75Ti3O12 Thin Films Prepared by RF Magnetron Sputtering

Jian Ping Yang; Xing Ao Li; An You Zuo; Zuo Bin Yuan; Zhu Lin Weng

doi:10.4028/www.scientific.net/KEM.434-435.296

Paper Titles

Ferroelectric Properties and Microstructures of Pr₆O₁₁-Doped Bi₄Ti₃O₁₂ Thin Films
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Dielectric Characteristics of the Lead-Free Piezoelectric Ceramics K_0.50Na_0.50Nb_0.95Ta_0.05O₃
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The Influence of Annealing Treatment on Physics and Electrical Characteristics of Ba(Zr_0.1Ti_0.9)O₃ Ferroelectric Films on ITO/Glass Substrate
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Extrinsic Scaling Effects on the Dielectric Response of Grained BaTiO₃ Films
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Bi₄Ti₃O₁₂ and Bi_3.25La_0.75Ti₃O₁₂ Thin Films Prepared by RF Magnetron Sputtering
p.296

Effect of Cooling Rate on the Properties of the Grain Boundary of CaCu₃Ti₄O₁₂ Ceramic
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Memory Properties of SrBi₂Ta₂O₉/ Ba(Zr_0.1Ti_0.9)O₃ Thin Films Prepared on Si Substrate
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Structural and Dielectrics Properties of (1-x)Pb(Fe_2/3W_1/3)O₃-xPbTiO₃ Ceramics
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Hydrothermal Synthesis of Nano-Structured Barium Titanate from Metatitanic Acid
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 434-435Bi4Ti3O12 and Bi3.25La0.75Ti3O12 Thin Films...

Bi₄Ti₃O₁₂ and Bi_3.25La_0.75Ti₃O₁₂ Thin Films Prepared by RF Magnetron Sputtering

Abstract:

Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) targets with 50-mm diameter and 5-mm thickness. The microstructure and ferroelectric properties of thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were different in these two kinds of film, the effects of La doping in the BLT thin film were very obvious.

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Key Engineering Materials (Volumes 434-435)

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296-299

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https://doi.org/10.4028/www.scientific.net/KEM.434-435.296

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Online since:

March 2010

Authors:

Jian Ping Yang, Xing Ao Li, An You Zuo, Zuo Bin Yuan, Zhu Lin Weng

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BLT Thin Film, BTO Thin Film, Ferroelectric Property, RF Magnetron Sputtering

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