Effect of Annealing on Sub-Gap Absorption in Amorphous InGaZnO4 Films

Tamihiro Gotoh; Kenta Kawarai; Hiroki Wakabayashi; Kenji Kaneda

doi:10.4028/www.scientific.net/KEM.459.19

Paper Titles

Spin and Orbital Magnetic Moment of Pd₃Co Evaluated by X-Ray Magnetic Diffraction Experiment
p.3

Spin Density Distribution of YTiO₃ Observed by X-Ray Magnetic Diffraction
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Magnetic Compton Profile Measurement of Thin Films
p.11

Ferromagnetic Resonance Frequency of Single-Layer Magnetic Metal Films with Lattice Distortion
p.15

Effect of Annealing on Sub-Gap Absorption in Amorphous InGaZnO₄ Films
p.19

Improvement of Crystallization Rate in Post-Annealed Ge₂Sb₂Te₅ Films
p.23

Ionic Conductivity of Polycrystalline Li₂Ge_xSi_1-xO₃ (x = 0.0~1.0)
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Structural Analysis of Rf Sputtered Er Doped Ta₂O₅ Films
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Preparation of CaTiO₃:Pr Phosphor by Using CaB₂O₄ as a Flux
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 459Effect of Annealing on Sub-Gap Absorption in...

Effect of Annealing on Sub-Gap Absorption in Amorphous InGaZnO₄ Films

Abstract:

Optical absorption in amorphous InGaZnO₄ films was examined by optical transmittance and photothermal spectroscopy using individual cantilever. The amorphous InGaZnO₄ films have optical bandgap of ~3.5 eV, and Urbach tail absorption and mid-gap absorption at 2.0-3.0 eV. Mid-gap absorption was reduced by thermal annealing at 300 °C in an atmosphere. This observation indicates that heat-induced structural change causes reduction of gap states in amorphous InGaZnO₄ films.

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Periodical:

Key Engineering Materials (Volume 459)

Pages:

19-22

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.459.19

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Online since:

December 2010

Authors:

Tamihiro Gotoh, Kenta Kawarai, Hiroki Wakabayashi, Kenji Kaneda

Keywords:

Amorphous Oxide Semiconductor, Optical Absorption, Photothermal Spectroscopy

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