Effect of Annealing on Sub-Gap Absorption in Amorphous InGaZnO4 Films

Abstract:

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Optical absorption in amorphous InGaZnO4 films was examined by optical transmittance and photothermal spectroscopy using individual cantilever. The amorphous InGaZnO4 films have optical bandgap of ~3.5 eV, and Urbach tail absorption and mid-gap absorption at 2.0-3.0 eV. Mid-gap absorption was reduced by thermal annealing at 300 °C in an atmosphere. This observation indicates that heat-induced structural change causes reduction of gap states in amorphous InGaZnO4 films.

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Periodical:

Edited by:

Osamu Hanaizumi and Masafumi Unno

Pages:

19-22

DOI:

10.4028/www.scientific.net/KEM.459.19

Citation:

T. Gotoh et al., "Effect of Annealing on Sub-Gap Absorption in Amorphous InGaZnO4 Films", Key Engineering Materials, Vol. 459, pp. 19-22, 2011

Online since:

December 2010

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$35.00

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