Ionic Conductivity of Polycrystalline Li2GexSi1-xO3 (x = 0.0~1.0)

Shinichi Furusawa; Shun Enokida

doi:10.4028/www.scientific.net/KEM.459.27

Paper Titles

Magnetic Compton Profile Measurement of Thin Films
p.11

Ferromagnetic Resonance Frequency of Single-Layer Magnetic Metal Films with Lattice Distortion
p.15

Effect of Annealing on Sub-Gap Absorption in Amorphous InGaZnO₄ Films
p.19

Improvement of Crystallization Rate in Post-Annealed Ge₂Sb₂Te₅ Films
p.23

Ionic Conductivity of Polycrystalline Li₂Ge_xSi_1-xO₃ (x = 0.0~1.0)
p.27

Structural Analysis of Rf Sputtered Er Doped Ta₂O₅ Films
p.32

Preparation of CaTiO₃:Pr Phosphor by Using CaB₂O₄ as a Flux
p.38

Solvent-Free Synthesis of Siloxanes and their Usage as Potential Cross-Coupling Reagents
p.43

Preparation of Anisotropic Chitosan Hydrogel with Birefringence and Analysis of Gel Formation Process
p.48

HomeKey Engineering MaterialsKey Engineering Materials Vol. 459Ionic Conductivity of Polycrystalline...

Ionic Conductivity of Polycrystalline Li₂Ge_xSi_1-xO₃ (x = 0.0~1.0)

Abstract:

Polycrystalline Li₂Ge_xSi_1-xO₃ (x = 0.0~1.0) was synthesized by solid state reaction, and its ionic conductivity was studied as a function of x in a temperature range of 500–700 K. The ionic conductivity was found to depend on x and was enhanced at x = 0.2–0.7. Furthermore, the pre-exponential factor and activation energy in the Arrhenius equation were also found to depend on x. These results suggest that lithium ionic conduction in Li₂Ge_xSi_1-xO₃ is strongly influenced by the structure of the framework.