Structural Analysis of Rf Sputtered Er Doped Ta2O5 Films

Jaspal Parganram Bange; Mayank Kumar Singh; Kazusa Kano; Kenta Miura; Osamu Hanaizumi

doi:10.4028/www.scientific.net/KEM.459.32

Paper Titles

Ferromagnetic Resonance Frequency of Single-Layer Magnetic Metal Films with Lattice Distortion
p.15

Effect of Annealing on Sub-Gap Absorption in Amorphous InGaZnO₄ Films
p.19

Improvement of Crystallization Rate in Post-Annealed Ge₂Sb₂Te₅ Films
p.23

Ionic Conductivity of Polycrystalline Li₂Ge_xSi_1-xO₃ (x = 0.0~1.0)
p.27

Structural Analysis of Rf Sputtered Er Doped Ta₂O₅ Films
p.32

Preparation of CaTiO₃:Pr Phosphor by Using CaB₂O₄ as a Flux
p.38

Solvent-Free Synthesis of Siloxanes and their Usage as Potential Cross-Coupling Reagents
p.43

Preparation of Anisotropic Chitosan Hydrogel with Birefringence and Analysis of Gel Formation Process
p.48

Thermosensitive Micelles Composed of Poly(lactide)-g-Poly(NIPAM-co-HEMA) Graft Copolymers
p.51

HomeKey Engineering MaterialsKey Engineering Materials Vol. 459Structural Analysis of Rf Sputtered Er Doped Ta2O5...

Structural Analysis of Rf Sputtered Er Doped Ta₂O₅ Films

Abstract:

Thin films of Er-doped Ta₂O₅ have been synthesized by RF sputtering. The influence of annealing temperature, number of Er tablets and annealing time on the structural properties of grown films, has been studied. The samples annealed bellow 800°C show amorphous nature. However, the sample annealed at 800°C and above shows crystalline nature of the film with β–Ta₂O₅ (orthorhombic) and δ–Ta₂O₅ (hexagonal) phase. The crystalline structure of the film is disturbed with the increase in Er concentration.

You might also be interested in these eBooks

Silicon Science and Advanced Micro-Device Engineering I

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 459)

Pages:

32-37

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.459.32

Citation:

Cite this paper

Online since:

December 2010

Authors:

Jaspal Parganram Bange, Mayank Kumar Singh, Kazusa Kano, Kenta Miura, Osamu Hanaizumi

Keywords:

Erbium, Sputtering, Tantalum Pentoxide

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] J. Y. Zhang, Q. Fang, and I. W. Boyd, Appl. Surf. Sci. Vol. 138-139 (1999), p.320.

Google Scholar

[2] S. J. Wu, B. Houng, and B. Huang, Journal of Alloys and Compounds Vol. 475 (2009), p.488.

Google Scholar

[3] A. Z. Subramanian, C. J. Oton, J. S. Wilkinson, and R. Greef, Journal of Luminescence Vol. 129 (2009), p.812.

Google Scholar

[4] M. K. Singh, G. Fusegi, K. Kano, J. P. Bange, K. Miura and O. Hanaizumi, IEICE Electronics Express Vol. 6 (2009), p.1676.

DOI: 10.1587/elex.6.1676

Google Scholar

[5] K. Miura, H. Miyazaki, and O. Hanaizumi, IEICE Trans. Electron., Vol. E91-C (2008), p.1669.

Google Scholar

[6] JCPDS No. 00-025-0922, PDF2, International center for diffraction data: Newton square, PA.

Google Scholar

[7] N. Ndiegi, T. Wilhoite, V. Subramanian, M. A. Shannon and R. I. Masel, Chem. Mater. Vol. 19 (2007), p.3155.

Google Scholar

[8] T. Dimitrova, K. Arshak, and E. Atanassova, Thin Solid Films Vol. 381 (2001), p.31.

Google Scholar

[9] N. Inoue, T. Ninomiya, S. Kashiwabara and R. Fujimoto, Appl. Phys. A 69 (1999), p. S609.

Google Scholar

[10] M. R. Mohammadi, and D. J. Fray, Sensors and Actuators B Vol. 141 (2009), p.76.

Google Scholar