Improvement of Crystallization Rate in Post-Annealed Ge2Sb2Te5 Films

Kenta Kawarai; Tamihiro Gotoh

doi:10.4028/www.scientific.net/KEM.459.23

Paper Titles

Spin Density Distribution of YTiO₃ Observed by X-Ray Magnetic Diffraction
p.7

Magnetic Compton Profile Measurement of Thin Films
p.11

Ferromagnetic Resonance Frequency of Single-Layer Magnetic Metal Films with Lattice Distortion
p.15

Effect of Annealing on Sub-Gap Absorption in Amorphous InGaZnO₄ Films
p.19

Improvement of Crystallization Rate in Post-Annealed Ge₂Sb₂Te₅ Films
p.23

Ionic Conductivity of Polycrystalline Li₂Ge_xSi_1-xO₃ (x = 0.0~1.0)
p.27

Structural Analysis of Rf Sputtered Er Doped Ta₂O₅ Films
p.32

Preparation of CaTiO₃:Pr Phosphor by Using CaB₂O₄ as a Flux
p.38

Solvent-Free Synthesis of Siloxanes and their Usage as Potential Cross-Coupling Reagents
p.43

HomeKey Engineering MaterialsKey Engineering Materials Vol. 459Improvement of Crystallization Rate in...

Improvement of Crystallization Rate in Post-Annealed Ge₂Sb₂Te₅ Films

Abstract:

Crystallization behaviors of dc sputtered Ge2Sb2Te5 films were studied by X-ray diffraction and transient optical transmittance. Crystalline peak at 29.0° in diffraction patterns appeared after thermal annealing at 180 and 210 °C. Crystallization rate increased after thermal annealing below crystallization temperature. These observations indicate that heat-induced structural change enhances crystallization rate of Ge₂Sb₂Te₅ films.

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Periodical:

Key Engineering Materials (Volume 459)

Pages:

23-26

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.459.23

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Online since:

December 2010

Authors:

Kenta Kawarai, Tamihiro Gotoh

Keywords:

Amorphous Chalcogenide, Crystallization Rate, Phase Change Memory (PCM)

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References

[1] N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, M. Takao, J. Appt. Phys., 69 (1991) 2849.

Google Scholar

[2] P. K. Khulbe, E. M. Wright, M. Mansuripur, J. Appl. Phys. 88 (2000) 3926.

Google Scholar

[3] T. Gotoh, K. Kawarai, Phys. Stat. Sol. (a), in press.

Google Scholar

[4] M. Wuttig, N. Yamada, Nature Materials, 6 (2007) 824.

Google Scholar

[5] U. Pietsch, V. Holý, T. Baumbach: High-resolution X-ray scattering from thin films to lateral nanostructures‎ (Springer-Verlag, New York, 2004), p.40.

Google Scholar

[6] I. Friedrich, V. Weidenhof, W. Njoroge, P. Franz, M. Wuttig, J. Appl. Phys. 87 (2000) 4130.

Google Scholar

[7] P. Jóvári, I. Kaban, J. Steiner, B. Beuneu, A. Schöps, and A. Webb, Phys. Rev. B 77 (2008) 035202.

Google Scholar

[8] M. Naito, M. Ishimaru, Y. Hirotsu, M Takashima, J. Non-Cryst. Solids 345-346 (2004) 112.

Google Scholar