Improvement of Crystallization Rate in Post-Annealed Ge2Sb2Te5 Films

Abstract:

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Crystallization behaviors of dc sputtered Ge2Sb2Te5 films were studied by X-ray diffraction and transient optical transmittance. Crystalline peak at 29.0° in diffraction patterns appeared after thermal annealing at 180 and 210 °C. Crystallization rate increased after thermal annealing below crystallization temperature. These observations indicate that heat-induced structural change enhances crystallization rate of Ge2Sb2Te5 films.

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Periodical:

Edited by:

Osamu Hanaizumi and Masafumi Unno

Pages:

23-26

DOI:

10.4028/www.scientific.net/KEM.459.23

Citation:

K. Kawarai and T. Gotoh, "Improvement of Crystallization Rate in Post-Annealed Ge2Sb2Te5 Films", Key Engineering Materials, Vol. 459, pp. 23-26, 2011

Online since:

December 2010

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$35.00

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