Comparison of Nanosized Pattern of Calixarene and ZEP520 Resists by Using Energy Deposition Distribution

Hui Zhang; Takuya Komori; Zulfakri bin Mohamad; You Yin; Sumio Hosaka

doi:10.4028/www.scientific.net/KEM.534.107

Paper Titles

Effect of Metal Modification to Carbon Paper Anodes on the Performance of Yeast-Based Microbial Fuel Cells Part ΙΙ: In the Case with Exogenous Mediator, Methylene Blue
p.82

Development of Particle Packed Bed Type Chromatography Using Dielectrophoresis
p.88

Analysis of Electrical Property of the Animal Cell Using Dielectrophoresis Levitation
p.93

Magnetic Separation of Organic Dyes in Wastewater Using Superconducting Bulk Magnets
p.99

Comparison of Nanosized Pattern of Calixarene and ZEP520 Resists by Using Energy Deposition Distribution
p.107

Effect of Salty Development on Forming HSQ Resist Nanodot Arrays with a Pitch of 15×15 nm² by 30-keV Electron Beam Lithography
p.113

Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media
p.118

Measurement of Coercive Force Enhanced by Nanometer-Sizing of Magnetic Dot by X-Ray Magnetic Circular Dichroism (XMCD)
p.122

Improved Observation Contrast of Block-Copolymer Nanodot Pattern Using Carbon Hard Mask (CHM)
p.126

HomeKey Engineering MaterialsKey Engineering Materials Vol. 534Comparison of Nanosized Pattern of Calixarene and...

Comparison of Nanosized Pattern of Calixarene and ZEP520 Resists by Using Energy Deposition Distribution

Abstract:

We numerically modeled the process of exposure and development of the calixarene negative resist and ZEP520 positive resist in electron beam lithography (EBL) in order to understand the limitation of nanopatterning of these two resists and to improve the resolution of the patterning. From the calculation of energy deposition distribution (EDD) in resist at various beam diameters, it is obvious that the fine probe beam with a diameter of 2 nm and thin resist should be adopted for formation of very fine dots. The simulation of resist development profile indicates that a dot size of 2 nm with a pitch of 20 nm can even be obtained at a higher critical energy density by using calixarene resist, while it cannot form the small pattern by using the ZEP520 resist because of the capillary force.