Effect of Salty Development on Forming HSQ Resist Nanodot Arrays with a Pitch of 15×15 nm2 by 30-keV Electron Beam Lithography

Takuya Komori; Hui Zhang; Takashi Akahane; Zulfakri bin Mohamad; You Yin; Sumio Hosaka

doi:10.4028/www.scientific.net/KEM.534.113

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Effect of Salty Development on Forming HSQ Resist Nanodot Arrays with a Pitch of 15×15 nm² by 30-keV Electron Beam Lithography

Abstract:

We investigated the effect of ultrahigh-resolution salty (NaCl contained) development of hydrogen silsesquioxane (HSQ) resist on forming fine dot arrays with a pitch of 15×15 nm² by 30-keV electron beam lithography for patterned media. The optimized concentration of resist developers was determined to fabricate most packed pattern. We found that increasing the concentration of NaCl into tetramethyl ammonium hydroxide (TMAH) could greatly improve the resist contrast (γ-value) of HSQ. And by using 2.3 wt% TMAH/4 wt% NaCl developer, we demonstrated 15×15 nm² pitched (3 Tbit/in.²) HSQ resist dot arrays with a dot size of < 10 nm.

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Periodical:

Key Engineering Materials (Volume 534)

Pages:

113-117

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.534.113

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Online since:

January 2013

Authors:

Takuya Komori, Hui Zhang, Takashi Akahane, Zulfakri bin Mohamad, You Yin, Sumio Hosaka

Keywords:

EB Drawing, HSQ Resist, Nanodot Arrays, Patterned Media, Salty Development

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