Multi-Level Storage in Lateral Phase Change Memory: From 3 to 16 Resistance Levels

You Yin; Rosalena Irma Alip; Yu Long Zhang; Ryota Kobayashi; Sumio Hosaka

doi:10.4028/www.scientific.net/KEM.534.131

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Improved Observation Contrast of Block-Copolymer Nanodot Pattern Using Carbon Hard Mask (CHM)
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Multi-Level Storage in Lateral Phase Change Memory: From 3 to 16 Resistance Levels
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Multi-Level Storage in Lateral Phase Change Memory: From 3 to 16 Resistance Levels

Abstract:

Here, we report multi-level storage (MLS) in multi-layer (ML) and single-layer (SL) phase change memories (PCM). For the former ML-PCM device, the active medium with two layers of chalcogenide consists of a top 30 nm TiN/180 nm SbTeN/20 nm TiN/bottom 120 nm SbTeN stacked multi-layer. Three stable and distinct resistance states are demonstrated in both static and dynamic switching characteristics of the multi-layer devices. For the latter SL-PCM device, the active medium with only one layer of chalcogenide consists of a top 50 nm TiN/150 nm SbTeN. We demonstrate that the number of distinguishable resistance levels can readily reach 16 and even higher. These levels in this study result from the initial threshold switching and the subsequent current-controlled crystallization induced by Joule heating. Therefore, the latter memory allows the creation of many distinct levels, thus enabling the low-cost ultra-high-density non-volatile memory.