Growth of SiOx Nanowires by Simple Vapor Transport Method and their Optical Properties

Yuto Hakamada; Shunji Ozaki

doi:10.4028/www.scientific.net/KEM.534.141

Paper Titles

Measurement of Coercive Force Enhanced by Nanometer-Sizing of Magnetic Dot by X-Ray Magnetic Circular Dichroism (XMCD)
p.122

Improved Observation Contrast of Block-Copolymer Nanodot Pattern Using Carbon Hard Mask (CHM)
p.126

Multi-Level Storage in Lateral Phase Change Memory: From 3 to 16 Resistance Levels
p.131

A Novel Phase Change Memory with a Separate Heater Characterized by Constant Resistance for Multilevel Storage
p.136

Growth of SiO_x Nanowires by Simple Vapor Transport Method and their Optical Properties
p.141

Defect Detection in Optical Disk Substrate by Mach-Zehnder Interferometer
p.149

Visible-Light Emission Properties of Erbium-Doped Tantalum-Oxide Films Produced by Co-Sputtering
p.154

Fabrication of Mach-Zehnder Polymer Waveguides by a Direct-Drawing Technique Using a Focused Proton Beam
p.158

Design and Analysis of Taper Structure for Light Coupling into Photonic Crystal Waveguides Fabricated by Si-Ion Implantation
p.162

HomeKey Engineering MaterialsKey Engineering Materials Vol. 534Growth of SiOx Nanowires by Simple Vapor Transport...

Growth of SiO_x Nanowires by Simple Vapor Transport Method and their Optical Properties

Abstract:

SiO_x nanowires were grown on Si substrates by a simple vapor transport method of heating the mixture of silicon monoxide and carbon powders at 1000 °C in a tube of the furnace. The dependence of the growth velocity on the growth temperature and on the radius of nanowires indicates that the SiO_x nanowires grow through the vaporliquidsolid (VLS) growth mechanism. The properties of the nanowires are characterized using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL).

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 534)

Pages:

141-145

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.534.141

Citation:

Cite this paper

Online since:

January 2013

Authors:

Yuto Hakamada, Shunji Ozaki

Keywords:

Nanowire, Photoluminescence (PL), SiO_x, Vapor Transport Method, Vapor-Liquid-Solid

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] D. W. Kwak, H. Y. Cho, and W. -C. Yang, Physica E Vol. 37 (2007), p.153.

Google Scholar

[2] J. Albuschies, M. Baus, O. Winkler, B. Handam, B. Spangenberg, and H. Kurz, Microelectronic Engineering Vol. 83 (2006), p.1530.

DOI: 10.1016/j.mee.2006.01.145

Google Scholar

[3] M. Meyyappan and M. Sunkara: Inorganic Nanowires: Applications, Properties, and Characterization (CRC Press, New York, 2010).

Google Scholar

[4] V. Schmidt, J. V. Wiittemann, and U. Gosele, Chem. Rev. Vol. 110 (2010), p.361.

Google Scholar

[5] E. I. Givargizov, J. Crystal Growth Vol 31 (1975), p.20.

Google Scholar

[6] J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben: Handbook of X-ray Photoelectron Spectroscopy (Perkin-Elmer Corp., Minnesota, 1992).

Google Scholar

[7] S. Salimian and M. J. Delfino, J. Appl. Phys. Vol. 70 (1991), p.3970.

Google Scholar

[8] M. R. Houston and R. J. Maboudian, J. Appl. Phys. Vol. 78 (1995), p.3801.

Google Scholar

[9] D. D. D. Ma, S. T. Lee, and J. Shinar, Appl. Phys. Lett. Vol. 87, (2005), p.033107.

Google Scholar

[10] H. Z. Song, X. M. Bao, N. S. Li, and X. L. Wu, Appl. Phys. Lett. Vol. 72 (1998), p.356.

Google Scholar

[11] G. G. Qin, J. Lin, J. Q. Duan, and G. Q. Yao, Appl. Phys. Lett. Vol. 69 (1996), p.1689.

Google Scholar

[12] W. H. Zheng, J. Xia, S. D. Lam, K. W. Cheah, M. R. Rakhshandehroo, and S. W. Pang, Appl. Phys. Lett. Vol. 74, (1999), p.386.

Google Scholar