Visible-Light Emission Properties of Erbium-Doped Tantalum-Oxide Films Produced by Co-Sputtering

Mayank Kumar Singh; Kenta Miura; Genjoh Fusegi; Kazusa Kano; Osamu Hanaizumi

doi:10.4028/www.scientific.net/KEM.534.154

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Visible-Light Emission Properties of Erbium-Doped Tantalum-Oxide Films Produced by Co-Sputtering
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 534Visible-Light Emission Properties of Erbium-Doped...

Visible-Light Emission Properties of Erbium-Doped Tantalum-Oxide Films Produced by Co-Sputtering

Abstract:

The visible-light emission properties of erbium (Er)-doped tantalum-oxide films prepared by co-sputtering were evaluated. Photoluminescence (PL) peaks at wavelengths of 550 and 670 nm could be observed from these films by ultraviolet-laser excitation after annealing. The dependence of Er³⁺ concentration, annealing temperature, and annealing time on the PL peak intensities were investigated. Such light-emitting sputtered films can be useful as high-index materials of photonic crystals that can be applied to novel active devices.

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Periodical:

Key Engineering Materials (Volume 534)

Pages:

154-157

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.534.154

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Online since:

January 2013

Authors:

Mayank Kumar Singh, Kenta Miura, Genjoh Fusegi, Kazusa Kano, Osamu Hanaizumi

Keywords:

Annealing, Erbium, Sputtering, Tantalum Oxide

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