A Novel Phase Change Memory with a Separate Heater Characterized by Constant Resistance for Multilevel Storage

Rosalena Irma Alip; Ryota Kobayashi; Yu Long Zhang; Zulfakri bin Mohamad; You Yin; Sumio Hosaka

doi:10.4028/www.scientific.net/KEM.534.136

Paper Titles

Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media
p.118

Measurement of Coercive Force Enhanced by Nanometer-Sizing of Magnetic Dot by X-Ray Magnetic Circular Dichroism (XMCD)
p.122

Improved Observation Contrast of Block-Copolymer Nanodot Pattern Using Carbon Hard Mask (CHM)
p.126

Multi-Level Storage in Lateral Phase Change Memory: From 3 to 16 Resistance Levels
p.131

A Novel Phase Change Memory with a Separate Heater Characterized by Constant Resistance for Multilevel Storage
p.136

Growth of SiO_x Nanowires by Simple Vapor Transport Method and their Optical Properties
p.141

Defect Detection in Optical Disk Substrate by Mach-Zehnder Interferometer
p.149

Visible-Light Emission Properties of Erbium-Doped Tantalum-Oxide Films Produced by Co-Sputtering
p.154

Fabrication of Mach-Zehnder Polymer Waveguides by a Direct-Drawing Technique Using a Focused Proton Beam
p.158

HomeKey Engineering MaterialsKey Engineering Materials Vol. 534A Novel Phase Change Memory with a Separate Heater...

A Novel Phase Change Memory with a Separate Heater Characterized by Constant Resistance for Multilevel Storage

Abstract:

A novel phase change memory structure with a separate heater was proposed for a multilevel storage. Finite element analysis was conducted to investigate the possibility of multilevel storage. 100 ns SET pulses, with an increasing amplitude from 0.5 V to 3 V, were applied for heating the phase change layer, Ge₂Se₂T₅ (GST). From the simulation result, it was exhibited that the temperature in the GST layer increased gradually when an increasing pulse is applied to the separate heater layer (N-TiSi₃). This implies that crystallization is well controlled by changing the amplitude of the applied SET pulse. The gradual increase in the temperature leads to gradual resistance drop, depending strongly on the capping material. The gradual resistance drop will allow multilevel storage for the memory device.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 534)

Pages:

136-140

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.534.136

Citation:

Cite this paper

Online since:

January 2013

Authors:

Rosalena Irma Alip, Ryota Kobayashi, Yu Long Zhang, Zulfakri bin Mohamad, You Yin, Sumio Hosaka

Keywords:

Capping Layer, Joule Heating Simulation, Multilevel Storage, Phase Change Memory, Separate-Heater

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Y. Yin, H. Sone and S. Hosaka, Jpn. J. Appl. Phys. 45 (2005) p.6208.

Google Scholar

[2] Y. Yin, H. Sone and S. Hosaka, Jpn. J. Appl. Phys. 45 (2006) p.4951.

Google Scholar

[3] Y. Yin, A. Miyachi, D. Niida, H. Sone and S. Hosaka, Jpn. J. Appl. Phys. 45 (2006) p.3238.

Google Scholar

[4] Y. Hwang, S. Lee, S. Ahn, K. Ryoo, H. Hong, H. Koo, F. Yeung, H. Kim, W. Jeong, J. Park, H. Horii, Y. Ha, J. Yi, G. Koh, G. Jeong, H. Jeong and K. Kinam, IEDM Tech. Dig. (2003) p.893.

DOI: 10.1109/iedm.2003.1269422

Google Scholar

[5] K. Kinam and G. Jeong, Microsyst. Technol. 13 (2007) p.145.

Google Scholar

[6] R. Simone, M. Robert, J. Jean, M. Becky, S. Martin, C. Ti-Chou, S. Yen-Hao and L. Erh-Kun, Microelectronics Engineering 85 (2008) p.2330.

Google Scholar

[7] M. H. R. Lankhorst, B.W.S.M.M. Ketelaars and R.A.M. Wolters, Nat. Mater. 4 (2005) p.347.

Google Scholar

[8] T. Ohta, N. Akahira, S. Ohara and I. Satoh, Opt. Electron Rev. 10 (1995) p.361.

Google Scholar

[9] H. Jiaping, S. Mingrong and C. Wenwu, Appl. Phys. Letters 82 (2003) p.67.

Google Scholar