Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media

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CoPt magnetic dot arrays with a fine pitch of 30 nm have been fabricated using electron beam (EB) lithography and ion milling. The possibility to ion-mill CoPt film using EB drawn calixarene resist pattern as a mask has been studied. We formed 30 nm pitch resist dot arrays with a dot diameter of 20 nm using 30-keV-EB lithography with calixarene resist. The resist dot arrays were ion-milled for 4 min using 200-eV Ar ion milling to fabricate CoPt dot arrays on a Si substrate. We fabricated fine pitched CoPt magnetic dot arrays with a diameter of 22-35 nm and a pitch of 30-150 nm. Results show that the ion-milled CoPt dot diameter increased with the dot pitch while the resist dot had a similar diameter of 20 nm.

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Edited by:

Sumio Hosaka

Pages:

118-121

Citation:

Z. bin Mohamad et al., "Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media", Key Engineering Materials, Vol. 534, pp. 118-121, 2013

Online since:

January 2013

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$38.00

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