Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media

Zulfakri bin Mohamad; Rosalena Irma Alip; Takuya Komori; Takashi Akahane; Hui Zhang; Miftakhul Huda; You Yin; Sumio Hosaka

doi:10.4028/www.scientific.net/KEM.534.118

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Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 534Fabrication of 30-nm-Pitched CoPt Magnetic Dot...

Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media

Abstract:

CoPt magnetic dot arrays with a fine pitch of 30 nm have been fabricated using electron beam (EB) lithography and ion milling. The possibility to ion-mill CoPt film using EB drawn calixarene resist pattern as a mask has been studied. We formed 30 nm pitch resist dot arrays with a dot diameter of 20 nm using 30-keV-EB lithography with calixarene resist. The resist dot arrays were ion-milled for 4 min using 200-eV Ar ion milling to fabricate CoPt dot arrays on a Si substrate. We fabricated fine pitched CoPt magnetic dot arrays with a diameter of 22-35 nm and a pitch of 30-150 nm. Results show that the ion-milled CoPt dot diameter increased with the dot pitch while the resist dot had a similar diameter of 20 nm.

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Key Engineering Materials (Volume 534)

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118-121

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.534.118

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January 2013

Authors:

Zulfakri bin Mohamad, Rosalena Irma Alip, Takuya Komori, Takashi Akahane, Hui Zhang, Miftakhul Huda, You Yin, Sumio Hosaka

Keywords:

Calixarene, Electron Beam Lithography, Ion Milling, Magnetic Dot Arrays, Patterned Media

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