Electrical Properties of DC-Sputtered Amorphous InGaZnO4 Films

Kenji Kaneda; Tamihiro Gotoh

doi:10.4028/www.scientific.net/KEM.534.36

Paper Titles

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Synthesis of MnZn-Ferrite Using Coprecipitation Method
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Synthesis of MnZn-Ferrite Using Sintering Aids
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Electrical Conductivity of Li_2xZn_2-3xTi_1+xO₄ Crystal
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Electrical Properties of DC-Sputtered Amorphous InGaZnO₄ Films
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Structural Properties of SrTiO₃ Transparent Thin Films Formed by RF Magnetron Sputtering with Changing Substrate Temperatures
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Study of the Chemical Adsorption Property of Allylsilylazobenzene in the Surface Modification of Nanoporous Alumina Membrane
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Preparation of Crystalline Turbostratic Boron Nitride Nanoparticles by Combination of Precursor Compound Formation and Impurity Segregation from Boric Acid and Urea
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Effect of Molecular Structure of Polyols with Different Molecular Characteristics on Synthesis of Boron Carbide Powder
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Electrical Properties of DC-Sputtered Amorphous InGaZnO₄ Films

Abstract:

Electrical properties in dc-sputtered amorphous InGaZnO₄ films have been investigated using the thermopower and resistivity measurements. The amorphous InGaZnO₄ films show n-type conduction at room temperature, and electrical activation energy of ~0.47 eV. The resistivity and Seebeck coefficient at room temperature were ~2×10⁴ Ωm and 1.5 mV/K for as-deposited sample. The resistivity and Seebeck coefficient decreased to ~2×10⁰ Ω·m and 2.7 mV/K when the sample was annealed at 670770 K. Slow response of photocurrent was also observed. Partial crystallization and structural change cause the improvement of electron transport with annealing treatments.