Synthesis of MnZn-Ferrite Using Sintering Aids

Kazushi Hoshi; Haruki Kenmochi; Takayuki Fukunaga; Shinichi Furusawa; Hiroshi Sakurai

doi:10.4028/www.scientific.net/KEM.534.26

Paper Titles

Effects of Interface Roughness and Lattice Strain on Perpendicular Magnetic Anisotropy in Co/Pd Multilayer
p.7

Calculation of Autocorrelation Functions Using the Dv-Xα Method for 14 Electron Diatomic Molecules
p.12

One-Dimensional Long Range Order of Autocorrelation Functions for Polyethylene Type Clusters Using the DV-Xα Method
p.17

Synthesis of MnZn-Ferrite Using Coprecipitation Method
p.22

Synthesis of MnZn-Ferrite Using Sintering Aids
p.26

Electrical Conductivity of Li_2xZn_2-3xTi_1+xO₄ Crystal
p.31

Electrical Properties of DC-Sputtered Amorphous InGaZnO₄ Films
p.36

Structural Properties of SrTiO₃ Transparent Thin Films Formed by RF Magnetron Sputtering with Changing Substrate Temperatures
p.40

Study of the Chemical Adsorption Property of Allylsilylazobenzene in the Surface Modification of Nanoporous Alumina Membrane
p.46

HomeKey Engineering MaterialsKey Engineering Materials Vol. 534Synthesis of MnZn-Ferrite Using Sintering Aids

Synthesis of MnZn-Ferrite Using Sintering Aids

Abstract:

Mn_0.7Zn_0.3Fe₂O₄ is synthesized by sintering the nanosize precursor with sintering aids, which is synthesized by the coprecipitation method. The crystal growth of Mn_0.7Zn_0.3Fe₂O₄ is controlled by the amount of sintering aids. Complex permeability is explained by the Maxwell-Garnett (MG) effective medium model. The ferromagnetic resonance frequency more than 1 GHz can be explained by the shape anisotropy under the sintering process of the Mn_0.7Zn_0.3Fe₂O₄ particles. These results suggest possibility of Mn_0.7Zn_0.3Fe₂O₄ as a high frequency device material.