Structure and Characteristics of ZrO₂ Dielectric Thin Films by Sol-Gel Technique

Abstract:

Dielectric properties and microstructures of ZrO₂ thin films prepared by the sol-gel method at different annealing temperatures have been investigated. All films exhibited ZrO₂ (111) highly orientation perpendicular to the substrate surface and the grain size increased with increasing annealing temperature. Dielectric properties of the Ag/ZrO₂/Ag/Si structure were measured by using HP 4192 Impedance Analyzer and Agilent 4155 Semiconductor Parameter Analyzer. The dependence of the microstructure and dielectric characteristics on annealing temperature was also investigated.

• Periodical: Key Engineering Materials (Volumes 602-603)
• Pages: 767-770
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.602-603.767
• Online since: March 2014
• Authors: Ching Fang Tseng*, Chiu Yun Chen, Pei Wen Huang
• Keywords: Dielectric Property, Microstructure, Sol-Gel Method, Zro₂

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