Electrical Characteristics in Transparent (Bi3.25Nd0.75)(Ti2.9V0.1)O12 Ferroelectric Thin Films

Fann Wei Yang; Chien Min Cheng; Kai Huang Chen

doi:10.4028/www.scientific.net/KEM.602-603.777

Paper Titles

Effect of Ti:Fe Ratios on the Phase Structures and Properties of Iron Titanium Oxides
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Preparation and Electromagnetic Wave Absorption Properties of Core-Shell Ni/TiO₂ Microspheres
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Structure and Characteristics of ZrO₂ Dielectric Thin Films by Sol-Gel Technique
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Effect of Y₂O₃ on Phase Transformation and Dielectric Properties of Alumina Ceramics
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Electrical Characteristics in Transparent (Bi_3.25Nd_0.75)(Ti_2.9V_0.1)O₁₂ Ferroelectric Thin Films
p.777

A Comparative Research on PLMNT Relaxor Ferroelectric Ceramic Prepared by Conventional and Hot-Press Techniques
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Effects of Microwave Sintering Time on Microstructure, Dielectric, Ferroelectric Properties of Barium Zirconate Titanate Ceramics
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Electrical and Physical Properties of Lead-Free (Na_0.5K_0.5)NbO₃- Bi_0.5(Na_0.90K_0.10)_0.5TiO₃ Ceramics
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Low-Temperature Sintering and Enhanced Piezoelectric Properties in KNN-LTS Nanopowder Prepared via a Low-Cost Water-Based Sol-Gel Method
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Electrical Characteristics in Transparent (Bi_3.25Nd_0.75)(Ti_2.9V_0.1)O₁₂ Ferroelectric Thin Films

Abstract:

In this study, we investigated the structure and ferroelectric properties of the as-deposited (Bi_3.25Nd_0.75)(Ti_2.9V_0.1)O₁₂ ferroelectric thin films on ITO substrate fabricated by rf magnetron sputtering method. The electrical, ferroelectric and physical characteristics of as-deposited (Bi_3.25Nd_0.75)(Ti_2.9V_0.1)O₁₂ thin films were developed under different conditions to find the optimal deposited parameters. The crystalline structure of the prepared (Bi_3.25Nd_0.75)(Ti_2.9V_0.1)O₁₂ thin films was analyzed by X-ray diffraction (XRD). Field emission scanning electron microscopy (FESEM) was used to observe the film thickness and the surface morphology including grain size and porosity. Additionally, the remnant polarization of the as-deposited ferroelectric thin films was improved by neodymium and vanadium elements doped in this study. The remanent polarization of as-deposited ferroelectric thin films was 11 μC/cm² as the measured frequency of 1kHz. Finally, the polarization of as-deposited ferroelectric thin film capacitor was decreased by 9% after the fatigue test with 10⁹ switching cycles.