A SOI-MEMS Based Resonant Barometric Pressure Sensor with Differential Output

Abstract:

This paper presents a laterally driven resonant barometric pressure sensor fabricated using SOI-MEMS technology. In this device, pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in H style doubly-clamped micro beams, leading to resonant frequency shift. In device fabrication, SOI-MEMS fabrication processes were utilized, where a new modified buffered hydrofluoric acid (BHF) solution was used to remove the buried oxide layer and release the suspended resonant beams. Experimental results recorded a device resolution of 10Pa, a nonlinearity of 0.04% and a temperature coefficient of-0.04% F.S/°C in the range of-40°C to 30°C. The long-term stability error of the proposed device was quantified as 0.05% F.S over the past 3 months.

• Periodical: Key Engineering Materials (Volumes 609-610)
• Pages: 1033-1039
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.609-610.1033
• Online since: April 2014
• Authors: Zhen Yu Luo*, De Yong Chen, Jun Bo Wang
• Keywords: Differential Output, Pressure Sensor, Resonant, Sacrificial Layer Release, SOI Wafer

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