Research for the Resonator Structure Process Technology of Resonant Pressure Sensors

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Abstract:

The fabrication of butterfly-shape resonator is key for high precision resonator, for requiring suspend on the silicon substrate. This paper is focused on the technology of making butterfly-shape resonator. the variety of structure design can be used to make butterfly-shape resonator have been analyzed, the structure of butterfly-shape resonator is obtained, and for reducing the etch surface roughness, KOH etching conditions, such as composition, concentration, and temperature of etch solution, have been done. Combining with above testing results, the structure design and optimization KOH etching technology are obtained ,based on the technology, using the boron etch stop technique , the silicon butterfly-shape resonator has been done, it can be used effectively in the fabrication of the silicon resonant sensor.

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Key Engineering Materials (Volumes 609-610)

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1020-1022

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April 2014

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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[1] K.E. BEAN, Anisotropic etching of silicon, IEEE Trans. Electron Devices, VOL. ED-25. October 1978, pp.1185-1193.

DOI: 10.1109/t-ed.1978.19250

Google Scholar

[2] E. Bassous, Fabrication of novel three-dimensional microstructures by the anisotropic etching of (100)and (110) silicon, IEEE Trans. Electron Devices, vol, ED-25, October 1978, pp, 1178-1184.

DOI: 10.1109/t-ed.1978.19249

Google Scholar

[3] H. Seidel, L. Csepregi, A. Heuberger, and H. Baumgartel, Anisotropic etching of crystalline silicon in alkaline solutions I: Orientation dependence and behavior of passivation layers, J. Electronchem, Soc., vol. 137, no. 11, November , 1990, pp, 3612-3626.

DOI: 10.1149/1.2086277

Google Scholar

[4] T.A. Kovacs, Maluf. Nadim I and Kurt E. Petersen, Bulk micromachining of silicon, Proceedings of the IEEE, vol. 86, No. 8, August 1998, pp, 1536-1539.

DOI: 10.1109/5.704259

Google Scholar