Effects of Hall Output Probes Shape on Magnetic Characterization of Hall Magnetic Field Sensor Based on MOSFET

Abstract:

This paper presents the effects of Hall output probes shape on the magnetic characteristic of magnetic field sensors with Hall output probes, which is based on metal-oxide-semiconductor field effect transistor (MOSFET). The Hall sensor chips are fabricated on <100> silicon substrates with high resistivity by using CMOS technology. Experiment results show that, when drain-source voltage V_DS=5.0 V, the magnetic sensitivity of the magnetic field sensor with the concave Hall output probes and channel length-width ratios of 160 μm/80 μm, 320 μm/80 μm and 480 μm/80 μm are 53.3 mV/T, 32.54 mV/T and 20.32 mV/T, respectively. At the same condition, the magnetic sensitivity of the magnetic field sensor with convex Hall output probes and the channel length-width ratio of 160 μm/80 μm is 76.8 mV/T.

• Periodical: Key Engineering Materials (Volumes 645-646)
• Pages: 595-599
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.645-646.595
• Online since: May 2015
• Authors: Xiao Feng Zhao, Qian Ru Lin, Ai Lin Mu, Dian Zhong Wen*, Hong Quan Zhang
• Keywords: Hall Effect, Hall Output Probe Shape, Magnetic Fileld Sensor, Magnetic Sensitivity

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