An Integrated Pressure and Magnetic Field Sensor Based on Piezoresistance Effect

Abstract:

An integrated pressure and magnetic field sensor based on piezoresistance effect is proposedin this paper. The integrated sensor is composed of a C-type silicon cup, ferromagnetic materialand Wheatstone bridge constructed by four metal oxide semiconductor field effect transistors(MOSFETs) channel resistances as piezoresistances. Based on the piezoresistance effect of channelresistances, the measurement to the external pressure P and magnetic field B can be achieved by thesensor. Through using complementary metal oxide semiconductor (CMOS) technology and microelectromechnicalsystem (MEMS) technology, the sensor chip was designed and fabricated on <100>orientation silicon substrates, locating the ferromagnetic material on its squared silicon membranecenter. The experimental results show that when supply voltage of the sensor is 2.0 V, the pressuresensitivity of sensor is 0.39 mV/kPa (B=0 T), and the magnetic field sensitivity of sensor is 1.48 mV/T(P=0 kPa).

• Periodical: Key Engineering Materials (Volumes 645-646)
• Pages: 610-615
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.645-646.610
• Online since: May 2015
• Authors: Tong Wu, Xiao Feng Zhao*, Xiang Hong Yang, Dian Zhong Wen, Gang Li
• Keywords: Integrated Sensor, Magnetic Field Sensor, MEMS Technology, Piezoresistance Effect, Pressure Sensor

References

[1] C.S. Smith. Piezoresistance effect in germanium and silicon [J]. Physics Review. Vol. 94 (1954), pp.42-49.

[2] S. Kordić. Integrated silicon magnetic-field sensors [J]. Sensors and Actuators A. Vol. 10 (1986), pp.347-378.

DOI: 10.1016/0250-6874(86)80054-3

[3] Ch. Roumenin, A. Ivanov, P. Nikolova. A new class of multisensors for magnetic field and temperature based on the diode Hall effect [J]. Sensors and Actuators A. Vol. 85 (2000), pp.163-168.

DOI: 10.1016/s0924-4247(00)00371-x

[4] Liu Jian, Li Xinxin. A piezoresistive microcantilever magnetic field sensor with on-chip selfcalibration function integrated [J]. Microelectronics Journal. Vol. 38 (2007), pp.210-215.

DOI: 10.1016/j.mejo.2006.11.015

[5] Z. Xu, D. Koltsov, A. Richardson, et al. Design and simulation of a multi-function MEMS sensor for health and usage monitoring [C]. 2010 Prognostics & System Health Management Conference. 2010, pp.1-7.

DOI: 10.1109/phm.2010.5413415

[6] C.L. Roozeboom, M.A. Hopcroft, W. S. Smith, et al. Integrated multifunctional environmental sensors [J]. Journal of Microelectromechanical Systems. Vol. 22 (2013), pp.779-793.

DOI: 10.1109/jmems.2013.2245400

[7] Zhao Xiaofeng, Wen Dianzhong, Li Gang. Fabrication and characteristics of an nc-Si/c-Si heterojunction MOSFETs pressure sensor [J]. Sensors. Vol. 12 (2012), pp.6369-6379.

DOI: 10.3390/s120506369

[8] Zhao Xiaofeng, Wu Tong, Cao Jingya, et al. Fabrication and characteristics of silicon bridge magnetic sensor based on nano-polysilicon TFTs [J]. Key Engineering Materials. Vol. 609-610 (2014), pp.1100-1105.

DOI: 10.4028/www.scientific.net/kem.609-610.1100

[9] Du Guangtao, Chen Xiangdong, Lin Qibin, et al. MEMS magnetic field sensor based on silicon bridge structure [J]. Journal of Semiconductors. Vol. 31 (2010), p.104011(1-6).

DOI: 10.1088/1674-4926/31/10/104011

[10] Du Guangtao, Chen Xiangdong, Lin Qibin. Micromechanical magnetic sensor based on cylindrical ferromagnets [J]. IEEE Sensors Journal. Vol. 11 (2011), pp.2973-2979.

DOI: 10.1109/jsen.2011.2153195