An XRD Phase Analysis of Al-F Re-Deposition Produced from Reactive Ion Etching

Abstract:

This paper reports the analysis of the composition, structure and phase of the re-deposition material that was generated from the reaction from CF₄ plasma etching on the Al₂O₃-TiC substrate. The re-deposition was sputtered from the etching area and deposited on a silicon coupon for analysis. The morphology of the re-deposition was investigated by scanning electron microscope (SEM) and the composite element of the re-deposition was detected by using energy dispersive x-ray spectroscopy (SEM-EDX). X-ray diffraction (XRD) was used to analyse the structure and phase of the re-deposition. The results show that the prepared re-deposition was composed of F and Al atoms, with 51.24 At% and 27.67 At%, respectively. XRD revealed that this was owing to the chemical formula AlF₃, which has a rhombohedral crystal structure in the most stable alpha phase (α-AlF₃).

• Periodical: Key Engineering Materials (Volume 659)
• Pages: 575-579
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.659.575
• Online since: August 2015
• Authors: Chupong Pakpum*
• Keywords: AlF₃, Fluorine-Based Plasma, RIE Etching, XRD

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