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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110

Materials Science Forum Vols. 105-110

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110

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Paper Title Page

Study of Interfacial Reactions in W/Si Systems by a Monoenergetic Positron Beam

Authors: Y. Tabuki, Long Wei, Shoichiro Tanigawa, K. Hinode, Naoto Kobayashi, T. Onai, N. Owada

1463

Study of Oxygen Atom Clustering in Si Induced by External Stress by Means of a Monoenergetic Positron Beam

Authors: Y. Tabuki, Long Wei, Shoichiro Tanigawa, R. Nagai, E. Takeda

1467

Variable-Energy Positron-Beam Studies of Si Implanted with MeV-Energy Ions

Authors: Akira Uedono, Long Wei, C. Dosho, Y. Tabuki, H. Kondo, Shoichiro Tanigawa, M. Tamura

1471

A Diffusion of Positrons by an Electric Field in MOS Transistors

Authors: Akira Uedono, Long Wei, Y. Tabuki, H. Kondo, Shoichiro Tanigawa, Y. Ohji

1475

Vacancy-Type Defects in Si⁺- and B⁺-Implanted Si Probed by a Monoenergetic Positron Beam

Authors: Akira Uedono, Long Wei, Y. Tabuki, H. Kondo, Shoichiro Tanigawa, J. Sugiura, Minoru Ogasawara

1479

Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation

Authors: Akira Uedono, Long Wei, Y. Tabuki, H. Kondo, Shoichiro Tanigawa, K. Wada, H. Nakanishi

1483

Characterization of Point Defects in Impurity-Doped GaAs by Slow Positrons

Authors: Long Wei, J.L. Lee, Shoichiro Tanigawa, M. Kawabe

1487

The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs during Rapid Thermal Annealing Studied by Slow Positrons

Authors: Long Wei, J.L. Lee, Shoichiro Tanigawa, Tsubasa Nakagawa, K. Ohta

1491

The Study of Surface State of III-V Compound Semiconductors by Slow Positrons

Authors: Long Wei, J.L. Lee, Shoichiro Tanigawa, H. Oigawa, Y. Nannichi

1495

Positron Lifetime Study of Polymers

Authors: J. Borek, W. Osoba

1501