Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates

Haitham Hrich; Matthieu Moret; Olivier Briot; Matthieu Paillet; Jean Manuel Decams; Périne Landois; Sylvie Contreras

doi:10.4028/p-1ak21z

Paper Titles

Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer
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Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers
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Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices
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Advances in 200 mm 4H SiC Wafer Development and Production
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Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates
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Effect of N and Al Doping on 3C-SiC Stacking Faults
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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Toward the Reproducible Growth of Graphene on Wide...

Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates

Abstract:

Herein, we report an original adaptation of an XRD set-up in order to measure the miscut angle values in our 4H-SiC on axis substrates with a high precision of ± 0.02°. This study also reveals a correlation between the formation of wide steps on 4H-SiC(0001) and the relative orientation of the SiC crystalline planes versus the gas flow direction. These two results paves the way towards the reproducible growth of graphene over wide SiC steps.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

59-63

DOI:

https://doi.org/10.4028/p-1ak21z

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Online since:

May 2022

Authors:

Haitham Hrich*, Matthieu Moret, Olivier Briot, Matthieu Paillet, Jean Manuel Decams, Périne Landois, Sylvie Contreras

Keywords:

4H-SiC(0001), Buffer Layer, Graphene, Miscut Angle, Sublimation, XRD

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* - Corresponding Author

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