Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer

Kristijan Luka Mletschnig; Mathias Rommel; Gregor Pobegen; Werner Schustereder; Peter Pichler

doi:10.4028/p-sg9dq0

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The Impact of Defect Density on Mechanical Characteristics of 4H-SiC Substrates
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Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer
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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Aluminum Activation in 4H-SiC Measured on...

Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer

Abstract:

The excellent material properties of the wide band gap semiconductor SiC are accompanied by challenges in device processing. Of particular importance is the incomplete activation of implanted Al acceptors after high-temperature annealing. In this work, we present a novel approach in applying the differential-capacitance method to lateral MOS capacitors, where systematic errors in its characterization are reduced by introducing a buried current-spreading layer. We find that the implantation of an additional current-spreading layer significantly reduces series resistance effects and enables a reliable capacitance-voltage measurement of low dopant concentrations of p-type wells in n-type epitaxial layers. The measurement of an Al box-like profile implanted at 500 °C and resulting in a doping concentration of 3·10¹⁷ cm^-3shows full activation after annealing at 1800 °C for 30 minutes.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

38-43

DOI:

https://doi.org/10.4028/p-sg9dq0

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Online since:

May 2022

Authors:

Kristijan Luka Mletschnig*, Mathias Rommel, Gregor Pobegen, Werner Schustereder, Peter Pichler

Keywords:

4H-SiC, Aluminum Implantation, Capacitance Voltage, Electrical Activation, MOS Capacitor, P-Type

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* - Corresponding Author

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