Advances in 200 mm 4H SiC Wafer Development and Production

Ian Manning; Kevin Moeggenborg; Andrey Soukhojak; Jon Searson; Matthew Gave; Gil Chung; Edward Sanchez

doi:10.4028/p-3iz201

Paper Titles

The Impact of Defect Density on Mechanical Characteristics of 4H-SiC Substrates
p.33

Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer
p.38

Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers
p.44

Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices
p.49

Advances in 200 mm 4H SiC Wafer Development and Production
p.54

Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates
p.59

Effect of N and Al Doping on 3C-SiC Stacking Faults
p.64

Impact of N Doping on 3C-SiC Defects
p.69

Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding
p.74

HomeMaterials Science ForumMaterials Science Forum Vol. 1062Advances in 200 mm 4H SiC Wafer Development and...

Advances in 200 mm 4H SiC Wafer Development and Production

Abstract:

200 mm diameter n-type 4H SiC wafers were produced from bulk crystals grown using a physical vapor transport (PVT) method. The configuration of the growth cell was modified to both allow for the growth of larger crystals with respect to the standard 150 mm process, and to induce a thermal environment necessary to increase the mass deposition rate. A 25% increase in deposition rate was achieved relative to the standard process. The resulting wafers exhibited resistivity uniformity comparable to commercial 150 mm product. Optical and x-ray techniques were used to evaluate wafer quality, and revealed surface and bulk crystal defect densities acceptable for epilayer growth.

By email View Pdf

You have full access to the following eBook

Silicon Carbide and Related Materials 2021

Read eBook

Info:

Periodical:

Materials Science Forum (Volume 1062)

Pages:

54-58

DOI:

https://doi.org/10.4028/p-3iz201

Citation:

Cite this paper

Online since:

May 2022

Authors:

Ian Manning*, Kevin Moeggenborg, Andrey Soukhojak, Jon Searson, Matthew Gave, Gil Chung, Edward Sanchez

Keywords:

200 mm, 4H, Bulk Crystal Growth, Defects, Physical Vapor Transport, PVT, Resistivity, X-Ray Topography

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

[1] M. Yamamoto, T. Kakisaka, and J. Imaoka, Technical trend of power electronics systems for automotive applications, Jpn. J. Appl. Phys. 59 (2020) SG0805.

DOI: 10.35848/1347-4065/ab75b9

Google Scholar

[2] A. Bhalla, Recent Developments Accelerating SiC Adoption, Mater. Sci. For. 924 (2015) 793-798.

DOI: 10.4028/www.scientific.net/msf.924.793

Google Scholar

[3] J. Quast, D. Hansen, M. Loboda, I. Manning, K. Moeggenborg, S. Mueller, C. Parfeniuk, E. Sanchez, and C. Whiteley, High Quality 150 mm 4H SiC Wafers for Power Device Production, Mater. Sci. For. 821-823 (2015) 56-59.

DOI: 10.4028/www.scientific.net/msf.821-823.56

Google Scholar

[4] T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano, Y. Kangawa, and K. Kakimoto, Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory, J. Crys. Growth 352 (2012) 177-180.

DOI: 10.1016/j.jcrysgro.2012.01.023

Google Scholar

[5] H. Wang, F. Wu, S. Byrappa, S. Sun, B. Raghothamachar, M. Dudley, E. Sanchez, D. Hansen, R. Drachev, S. Mueller, and M. Loboda, Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC, Appl. Phys. Lett. 100 (2012) 172105.

DOI: 10.1063/1.4704679

Google Scholar