For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
A Novel Approach of Utilizing Mechanically Flexible SiC Substrate to Grow Crack-Free AlN Bulk Crystal by Thermal Strain Relaxation Functionality
p.28
The Impact of Defect Density on Mechanical Characteristics of 4H-SiC Substrates
p.33
Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer
p.38
Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers
p.44
Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices
p.49
Advances in 200 mm 4H SiC Wafer Development and Production
p.54
Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates
p.59
Effect of N and Al Doping on 3C-SiC Stacking Faults
p.64
Impact of N Doping on 3C-SiC Defects
p.69

Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices

Article Preview

Abstract:

In this work we report on the impact of various crystalline defects present in 4H-SiC epitaxial layers on the electrical blocking characteristics of SiC power devices. Dedicated test structures were fabricated and electrically characterized in reverse bias mode. SiC substrate and epitaxial crystal defects, as well defects due to front-end processing were detected and classified using commercial inspection tools. Devices with a single defect-type were studied which leads to a direct correlation of the leakage current spot position within the device and the obtained blocking characteristics. This gives a better understanding of each crystal defect impact on device ́s performance which leads to an improvement in the reliability and cost reduction of SiC power devices.

By email View Pdf
You have full access to the following eBook
Silicon Carbide and Related Materials 2021 Read eBook

Info:

Periodical:

Materials Science Forum (Volume 1062)

Pages:

49-53

DOI:

https://doi.org/10.4028/p-f26rb5

Citation:

Cite this paper

Online since:

May 2022

Authors:

E. Kodolitsch*, V. Sodan, M. Krieger, Nikolaos Tsavdaris

Keywords:

4H-SiC, Electrical Characterization, Extended Defects, Photon Emission Microscopy

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Share:

Citation:

* - Corresponding Author

References

[1] T. Kimoto et al., Prog. Cryst. Growth Charact. Mater. 62, (2016), 329-351.

Google Scholar

[2] J. Zhao et al., Nanotechnol. Precis. Eng. 3, (2020), 229.

Google Scholar

[3] R. Konishi et al., Japanese J. Appl. Phys. 52 (2013).

Google Scholar

[4] H. Jung et al., Materials Science Forum 821-823, (2015), 563-566.

Google Scholar

[5] T. Katsuno and Y. Watanabe et al., Japanese J. Appl. Phys. 50 (2011).

Google Scholar

[6] E. Van Brunt et al., Materials Science Forum 924, (2018), 137-142.

Google Scholar

[7] H. Das et al., ECS Transactions 80, (2017), 239-243.

Google Scholar

[8] U. Lindefelt et al., in Silicon Carbide- Recent Major Advances (eds W. J. Choyke, H. Matsunami and G. Pensl), Springer, (2004), p.89.

DOI: 10.1007/978-3-642-18870-1

Google Scholar

[9] P. Neudeck et al., IEEE Electron Device Letter 15, (1994), 63.

Google Scholar

[10] Zhang et al., Mater. Sci. Forum 527-529, (2006), 327-332.

Google Scholar

[11] Dong L. et al., Mater. Sci. Forum 778-780, (2014), 354-357.

Google Scholar

[12] J. Schoeck et al., Materials Science Forum 924, (2018), 164-167.

Google Scholar

[13] P. G. Neudeck et al., Materials Science Forum 338-342, (2000), 1161-66.

Google Scholar

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.