Impact of N Doping on 3C-SiC Defects

Abstract:

This work studies the variation of the defects density of in situ doped 3C-SiC layers during heteroepitaxial Chemical Vapour Deposition (CVD). A review on the evolution of defects density as a function of 3C-SiC grown thickness, for different N doping concentrations is offered. The doping range spanned in the experiment suits the realization of power devices.The outcome of this work provides an explanatory picture of the significant drop in stacking faults density by roughly an order of magnitude through the N doping at concentrations of the order of ~2.9×10¹⁹ cm^-3 during the growth. Conversely, N doping shows to favor the development of dislocation-like defects within the crystalline matrix. However, in few um, the crystal is able to display an effective dislocation closure mechanism, which rapidly recovers crystal quality.

• Periodical: Materials Science Forum (Volume 1062)
• Pages: 69-73
• DOI: https://doi.org/10.4028/p-54nqrc
• Online since: May 2022
• Authors: Cristiano Calabretta*, Viviana Scuderi, Annalisa Cannizzaro, Ruggero Anzalone, Marco Mauceri, Danilo Crippa, Simona Boninelli, Francesco La Via
• Keywords: 3C-SiC, Defect Reduction, Dislocation, Molten KOH, Nitrogen Doping, SEM, Stacking Fault

References

[1] F. La Via et al. New approaches and understandings in the growth of cubic silicon carbide, Materials, 14(18), 2021, 5348.

[2] M. Zimbone et al., Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC, Crystal Growth and Design, 20(5), 2020, 3104-3111.

DOI: 10.1021/acs.cgd.9b01708

[3] M. Zimbone et al. Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries, Acta Materialia, 213, 2021, 116915.

DOI: 10.1016/j.actamat.2021.116915

[4] M. Zimbone et al. 3C-SiC growth on inverted silicon pyramids patterned substrate, Materials, 2019, 3407.

DOI: 10.3390/ma12203407

[5] M. Zielinski et al. Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor, Journal of Crystal Growth, 310,2008, 3174-3182.

DOI: 10.1016/j.jcrysgro.2008.03.022

[6] H.K.E. Latha et al., Microstructure and electrical properties of nitrogen doped 3C–SiC thin films deposited using methyltrichlorosilane, Materials Science in Semiconductor Processing, 29,2015, 117-123.

DOI: 10.1016/j.mssp.2013.12.017

[7] V. Scuderi et al. Characterization of 4H-and 6H-like stacking faults in cross section of 3C-Sic epitaxial layer by room-temperature μ-photoluminescence and μ-raman analysis, Materials.

DOI: 10.3390/ma13081837

[8] C. Calabretta, et al. Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100), Materials, 14(16), 2021, 4400.

DOI: 10.3390/ma14164400

[9] Y. Umeno, K. Yagi, and H. Nagasawa, Phys. Status Solidi B, 1–6, (2012).

[10] C. Calabretta et al. Impact of nitrogen doping on the selective closure of Stacking Faults in 3C-SiC, Journal of Materials Science (submitted).