A Novel Approach of Utilizing Mechanically Flexible SiC Substrate to Grow Crack-Free AlN Bulk Crystal by Thermal Strain Relaxation Functionality

Daichi Dojima; Moeko Matsubara; Hideaki Minamiyama; Tadaaki Kaneko

doi:10.4028/p-85ph3t

Paper Titles

Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich Configuration
p.8

Defect Reduction in Epilayers for SiC Trench MOSFETs by Enhanced Epitaxial Growth
p.13

High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer
p.18

3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations
p.23

A Novel Approach of Utilizing Mechanically Flexible SiC Substrate to Grow Crack-Free AlN Bulk Crystal by Thermal Strain Relaxation Functionality
p.28

The Impact of Defect Density on Mechanical Characteristics of 4H-SiC Substrates
p.33

Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer
p.38

Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers
p.44

Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices
p.49

HomeMaterials Science ForumMaterials Science Forum Vol. 1062A Novel Approach of Utilizing Mechanically...

A Novel Approach of Utilizing Mechanically Flexible SiC Substrate to Grow Crack-Free AlN Bulk Crystal by Thermal Strain Relaxation Functionality

Abstract:

The fabrication of novel semiconductor seed crystals using hetero-epitaxial growth on substrates such as Si, sapphire, and SiC, which have been successfully grown to large diameter and high quality, is very attractive as a breakthrough technology. However, a critical issue in heteroepitaxial growth is the formation of cracks due to thermal stress caused by the difference in the thermal expansion coefficient between the substrate and the growth layer during the cooling process after growth. In this study, we propose a method to reduce thermal stress by using a "Flexible substrate," which is a substrate with mechanical flexibility enhanced by removing more than 80% of its volume with periodic through holes. Using this method, we obtained an AlN hetero-epitaxial growth layer with absolutely no cracks observed. This method is applicable not only for AlN on SiC but also for the fabrication of various new semiconductor materials.

By email View Pdf

You have full access to the following eBook

Silicon Carbide and Related Materials 2021

Read eBook

Info:

Periodical:

Materials Science Forum (Volume 1062)

Pages:

28-32

DOI:

https://doi.org/10.4028/p-85ph3t

Citation:

Cite this paper

Online since:

May 2022

Authors:

Daichi Dojima*, Moeko Matsubara, Hideaki Minamiyama, Tadaaki Kaneko

Keywords:

Crack Reduction, Flexible Substrate, Hetero-Epitaxial Growth, Thermal Stress Relaxation

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

[1] Hirokuni Tokuda, Maiko Hatano, Norimasa Yafune, Shin Hashimoto, Katsushi Akita, Yoshiyuki Yamamoto, and Masaaki Kuzuhara, High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate, Appl. Phys. Express, 3 (2010) 121003.

DOI: 10.1143/apex.3.121003

Google Scholar

[2] G. R. Yazdi, R. Vasiliauskas, M. Syväjärvi, and R. Yakimova, Fabrication of free-standing AlN crystals by controlled microrod growth, J. Cryst. Growth, Vol. 310, issue 5 (2008) 935-939.

DOI: 10.1016/j.jcrysgro.2007.11.124

Google Scholar

[3] Tsvetanka S. Zheleva, Scott A. Smith, Darren B. Thomson, Kevin J. Linthicum, Pradeep Rajagopal, and Robert F. Davis, Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films, J. Electron. Mater., 28 (1999) L5-L8.

DOI: 10.1007/s11664-999-0239-z

Google Scholar

[4] R. R. Sumathi, R. U. Barz, P. Gille, and T. Straubinger, Influence of interface formation on the structural quality of AlN single crystals grown by sublimation method, Physica Status Solidi C, 8.7– 8 (2011) 2107–2109.

DOI: 10.1002/pssc.201000941

Google Scholar

[5] Philip G. Neudeck, J. Anthony Powell, Glenn M. Beheim, Emye L. Benavage, and Phillip B. Abel, Enlargement of step-free SiC surfaces by homoepitaxial web growth of thin SiC cantilevers, J. Appl. Phys., 92 (2002) 2391.

DOI: 10.1063/1.1497456

Google Scholar

[6] Christian Schumacher, Steve Marschner, Markus Gross, and Bernhard Thomaszewski, Mechanical characterization of structured sheet material, ACM Trans. Graph., Vol. 37, No. 4, 148 (2018) 1–15.

DOI: 10.1145/3197517.3201278

Google Scholar

[7] Shoji Ushio, Tatsuya Karaki, Kenta Hagiwara, Noboru Ohtani, and Tadaaki Kaneko, Surface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC Crucible, Mater. Sci. Forum, Vol. 717-720 (2012) 573-576.

DOI: 10.4028/www.scientific.net/msf.717-720.573

Google Scholar

[8] Daichi Dojima, Koji Ashida, and Tadaaki Kaneko, In-situ growth mode control of AlN on SiC substrate by sublimation closed space technique, J. Cryst. Growth, Vol. 483, 1 (2018) 206-210.

DOI: 10.1016/j.jcrysgro.2017.11.032

Google Scholar

[9] Martin Kuball, Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control, Surf. Interface Anal., 31 (2001) 987–999.

DOI: 10.1002/sia.1134

Google Scholar

[10] Yoshitaka Taniyasu, Makoto Kasu, and Toshiki Makimoto, Threading dislocations in heteroepitaxial AlN layer grown by MOVPEon SiC (0 0 0 1) substrate, J. Cryst. Growth, 298 (2007) 310–315.

DOI: 10.1016/j.jcrysgro.2006.10.032

Google Scholar