Defect Reduction in Epilayers for SiC Trench MOSFETs by Enhanced Epitaxial Growth

Daniel Baierhofer; Bernd Thomas; F. Staiger; B. Marchetti; C. Förster; Tobias Erlbacher

doi:10.4028/p-h7gy42

Paper Titles

Preface

Models for Impurity Incorporation during Vapor-Phase Epitaxy
p.3

Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich Configuration
p.8

Defect Reduction in Epilayers for SiC Trench MOSFETs by Enhanced Epitaxial Growth
p.13

High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer
p.18

3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations
p.23

A Novel Approach of Utilizing Mechanically Flexible SiC Substrate to Grow Crack-Free AlN Bulk Crystal by Thermal Strain Relaxation Functionality
p.28

The Impact of Defect Density on Mechanical Characteristics of 4H-SiC Substrates
p.33

Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer
p.38

HomeMaterials Science ForumMaterials Science Forum Vol. 1062Defect Reduction in Epilayers for SiC Trench...

Defect Reduction in Epilayers for SiC Trench MOSFETs by Enhanced Epitaxial Growth

Abstract:

The yield of high power 4H-SiC Trench-MOSFET devices, especially for those with large chip area, is largely dependent on the quality of the underlying epitaxial layers and therefore low densities of critical defects are of utmost importance. Different growth conditions for the deposition of epitaxial layers were investigated to reduce the impact of defects on electrical device performance. For this investigation, 12 μm thick n-type epitaxial layers were grown varying growth rates for the buffer and the drift layer in a warm-wall chemical vapor deposition reactor. The defects in the epitaxial layers were characterized utilizing surface microscopy as well as ultraviolet photoluminescence techniques. A quantitative comparison of surface defects and crystallographic defects between the different growth conditions was conducted with these methods. The impact of the growth conditions on the formation of critical defects is discussed in detail. The reduction of critical defects, which resulted in an increase of the predicted die yield, as well as an outlook on future investigations, is discussed.

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Silicon Carbide and Related Materials 2021

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

13-17

DOI:

https://doi.org/10.4028/p-h7gy42

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Online since:

May 2022

Authors:

Daniel Baierhofer*, Bernd Thomas, F. Staiger, B. Marchetti, C. Förster, Tobias Erlbacher

Keywords:

Defect Classification, Defect Detection, Epitaxial Layer, Growth Parameters, Usable Area

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* - Corresponding Author

References

[1] D. Baierhofer, Current SiC Power Device Development, Material Defect Measurements and Characterization at Bosch, in: 49th ESSDERC, IEEE, 2019, p.31–34.

DOI: 10.1109/essderc.2019.8901792

Google Scholar

[2] B.J. Baliga, Synopsys, in: Wide Bandgap Semiconductor Power Devices, Elsevier, 2019, p.373–388.

DOI: 10.1016/b978-0-08-102306-8.00011-3

Google Scholar

[3] T. Kimoto, SiC material properties, in: Wide Bandgap Semiconductor Power Devices, Elsevier, 2019, p.21–42.

DOI: 10.1016/b978-0-08-102306-8.00002-2

Google Scholar

[4] T. Kimoto, H. Watanabe, Defect engineering in SiC technology for high-voltage power devices, Appl. Phys. Express 13 (2020) 120101.

DOI: 10.35848/1882-0786/abc787

Google Scholar

[5] S. Ha, P. Mieszkowski, M. Skowronski, L.B. Rowland, Dislocation conversion in 4H silicon carbide epitaxy, Journal of Crystal Growth 244 (2002) 257–266.

DOI: 10.1016/s0022-0248(02)01706-2

Google Scholar

[6] B. Kallinger, B. Thomas, S. Polster, P. Berwian, J. Friedrich, Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC, MSF 645-648 (2010) 299–302.

DOI: 10.4028/www.scientific.net/msf.645-648.299

Google Scholar

[7] H. Das, S. Sunkari, J. Justice, H. Pham, K.S. Park, Effect of Defects in Silicon Carbide Epitaxial Layers on Yield and Reliability, MSF 963 (2019) 284–287.

DOI: 10.4028/www.scientific.net/msf.963.284

Google Scholar