Preface
Models for Impurity Incorporation during Vapor-Phase Epitaxy
p.3
p.3
Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich Configuration
p.8
p.8
Defect Reduction in Epilayers for SiC Trench MOSFETs by Enhanced Epitaxial Growth
p.13
p.13
High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer
p.18
p.18
3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations
p.23
p.23
A Novel Approach of Utilizing Mechanically Flexible SiC Substrate to Grow Crack-Free AlN Bulk Crystal by Thermal Strain Relaxation Functionality
p.28
p.28
The Impact of Defect Density on Mechanical Characteristics of 4H-SiC Substrates
p.33
p.33
Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer
p.38
p.38
Preface
Abstract:
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