Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich Configuration

Abstract:

In view of obtaining a step bunched morphology on large 4H-SiC surfaces, a sandwich configuration is investigated. A piece of silicon is melted between two 4H-SiC 4° off wafers, allowing a better spreading of the liquid than a Si drop approach. This successfully leads to highly step-bunched surfaces, though with irregular steps. The most regular step and terrace stuctures were found to be the result of epitaxial growth via a dissolution-precipitation process occuring from the edges to the center of the wafers. This is probably caused by radio-frequency induced electromagnetic convection within liquid Si. This process is quenched when using smaller liquid thickness.

• Periodical: Materials Science Forum (Volume 1062)
• Pages: 8-12
• DOI: https://doi.org/10.4028/p-8302i1
• Online since: May 2022
• Authors: Yann Jousseaume*, François Cauwet, Gabriel Ferro
• Keywords: Liquid Silicon, Sandwich, Step-Bunched Morphology, Surface Structuring

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