High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer

Ruggero Anzalone; Giuseppe Greco; Fabrizio Roccaforte; Patrick Fiorenza; Nicolo Piluso; Andrea Severino

doi:10.4028/p-0b73tf

Paper Titles

Preface

Models for Impurity Incorporation during Vapor-Phase Epitaxy
p.3

Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich Configuration
p.8

Defect Reduction in Epilayers for SiC Trench MOSFETs by Enhanced Epitaxial Growth
p.13

High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer
p.18

3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations
p.23

A Novel Approach of Utilizing Mechanically Flexible SiC Substrate to Grow Crack-Free AlN Bulk Crystal by Thermal Strain Relaxation Functionality
p.28

The Impact of Defect Density on Mechanical Characteristics of 4H-SiC Substrates
p.33

Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer
p.38

HomeMaterials Science ForumMaterials Science Forum Vol. 1062High Temperature Etching for Threading Dislocation...

High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer

Abstract:

In this work, the effect of high temperature molten KOH wet etching on GaN/AlGaN epilayer has been investigated for different family of dislocations. The high etching temperature (up to 510°C) allows a good definition of the pits, making easy the observation and the counts. Such high temperature will allow a detailed study on the statistical distribution of the dislocations on whole wafer by optical microscope for screw/mixed dislocation. A comparison on dislocation density between AlGaN/GaN structure grown on Si (111) substrate and 4H-SiC substrate has been performed.

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