Preface
Study on Homoepitaxy Performance of Engineered 150 mm and 200 mm SiC Substrates in a Multi-Wafer Batch Reactor
p.1
p.1
A Study of Epitaxial Growth on 4H-SiC Substrates Treated by Plasma Polish Dry Etch (PPDE) Process
p.11
p.11
Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates
p.17
p.17
Lab-Based X-Ray Topography Characterization of Axial Samples from 4H-SiC Boules Grown by PVT Method
p.27
p.27
New Insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
p.37
p.37
Process Gas Control for High-Resistance HPSI-SiC Growth
p.43
p.43
High-Temperature Adhesive Bonding of 4H-SiC Substrates
p.49
p.49
New Insights into the Occurrence of Prismatic Slip during PVT Growth of SiC Crystals
p.57
p.57
Preface
Abstract:
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