New Insights in Orientation and Growth of 150 mm GaN on SiC for HEMT

Cristiano Calabretta; Nicolo Piluso; Simona Boninelli; Cristophe Iatosti; Emmanuel Roy; Daniele Calabriso; Louise Lilja; Alexandre Ellison; Carlo Riva; Ferdinando Iucolano; Andrea Severino

doi:10.4028/p-sTgt8T

Paper Titles

Study on Homoepitaxy Performance of Engineered 150 mm and 200 mm SiC Substrates in a Multi-Wafer Batch Reactor
p.1

A Study of Epitaxial Growth on 4H-SiC Substrates Treated by Plasma Polish Dry Etch (PPDE) Process
p.11

Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates
p.17

Lab-Based X-Ray Topography Characterization of Axial Samples from 4H-SiC Boules Grown by PVT Method
p.27

New Insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
p.37

Process Gas Control for High-Resistance HPSI-SiC Growth
p.43

High-Temperature Adhesive Bonding of 4H-SiC Substrates
p.49

New Insights into the Occurrence of Prismatic Slip during PVT Growth of SiC Crystals
p.57

SmartSiC™ 150 & 200mm Engineered Substrate: Enabling SiC Power Devices with Improved Performances and Reliability
p.65

HomeMaterials Science ForumMaterials Science Forum Vol. 1156New Insights in Orientation and Growth of 150 mm...

New Insights in Orientation and Growth of 150 mm GaN on SiC for HEMT

Abstract:

This work explores the application of gallium nitride (GaN)-based solid-state devices for high-power, high-frequency, and high-temperature technologies. It presents an in-depth study of GaN on semi-insulating SiC substrates. The study demonstrates, through bow range investigation, optical microscopy, and X-ray diffraction (XRD), that by adapting growth parameters from those used for Si substrates to those suitable for SiC substrates, it is possible to achieve high-quality crystalline MOCVD growth both under on-axis and 4°off-axis substrate orientations.

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Periodical:

Materials Science Forum (Volume 1156)

Pages:

37-41

DOI:

https://doi.org/10.4028/p-sTgt8T

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Online since:

September 2025

Authors:

Cristiano Calabretta*, Nicolo Piluso, Simona Boninelli, Cristophe Iatosti, Emmanuel Roy, Daniele Calabriso, Louise Lilja, Alexandre Ellison, Carlo Riva, Ferdinando Iucolano, Andrea Severino

Keywords:

GaN, MOCVD, Optical Microscopy, Photoluminescence, SiC

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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