Paper Titles

Study on Homoepitaxy Performance of Engineered 150 mm and 200 mm SiC Substrates in a Multi-Wafer Batch Reactor
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A Study of Epitaxial Growth on 4H-SiC Substrates Treated by Plasma Polish Dry Etch (PPDE) Process
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Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates
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Lab-Based X-Ray Topography Characterization of Axial Samples from 4H-SiC Boules Grown by PVT Method
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New Insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
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Process Gas Control for High-Resistance HPSI-SiC Growth
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High-Temperature Adhesive Bonding of 4H-SiC Substrates
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New Insights into the Occurrence of Prismatic Slip during PVT Growth of SiC Crystals
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HomeMaterials Science ForumMaterials Science Forum Vol. 1156Thick Semi-Insulating 4H-SiC Layer Exfoliation for...

Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates

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Abstract:

The growing demand for 4H-SiC substrates in power device fabrication has encouraged the development of engineered substrates to reduce costs and facilitate wafer re-usability for effective material utilization. This work presents a novel approach for manufacturing SiC power devices is to exfoliate the required drift layer thickness from ultra-high-quality Semi Insulating (SI) 4H-SiC material, bond it to a conductive SiC substrate and thus obtain the non-epitaxial engineered substrate. Energy-filtered Ion Implantation (EFII) technology enables custom doping profiles, precise control of doping concentration, and potentially robust material properties compared to as-grown epitaxial layers in the bonded layer. Key steps to exfoliate a 4μm thick SiC layer from semi-insulating substrates and bond it to low-cost, highly conductive mono-crystalline SiC are demonstrated. This paper mainly focuses on the physical characterization of demonstrated samples.

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Periodical:

Materials Science Forum (Volume 1156)

Pages:

17-26

DOI:

https://doi.org/10.4028/p-tzYpX7

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Online since:

September 2025

Authors:

Hitesh Jayaprakash*, Constantin Csato, Robert Koch, Florian Krippendorf, Michael Rueb

Keywords:

Engineered Substrate, Ion Slicing, Layer Transfer, Semi-Insulating 4H-SiC

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