A Study of Epitaxial Growth on 4H-SiC Substrates Treated by Plasma Polish Dry Etch (PPDE) Process

Tawhid Rana; Kevin Moeggenborg; Luis Reyes; Katarzyna Izabela Stokeley; Sam Johnson; Ed Sanchez

doi:10.4028/p-Shye9P

Paper Titles

Preface

Study on Homoepitaxy Performance of Engineered 150 mm and 200 mm SiC Substrates in a Multi-Wafer Batch Reactor
p.1

A Study of Epitaxial Growth on 4H-SiC Substrates Treated by Plasma Polish Dry Etch (PPDE) Process
p.11

Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates
p.17

Lab-Based X-Ray Topography Characterization of Axial Samples from 4H-SiC Boules Grown by PVT Method
p.27

New Insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
p.37

Process Gas Control for High-Resistance HPSI-SiC Growth
p.43

High-Temperature Adhesive Bonding of 4H-SiC Substrates
p.49

New Insights into the Occurrence of Prismatic Slip during PVT Growth of SiC Crystals
p.57

HomeMaterials Science ForumMaterials Science Forum Vol. 1156A Study of Epitaxial Growth on 4H-SiC Substrates...

A Study of Epitaxial Growth on 4H-SiC Substrates Treated by Plasma Polish Dry Etch (PPDE) Process

Abstract:

We studied the impact of plasma polish dry etch (PPDE) on SiC substrates and its effect on epilayers grown on PPDE treated substrates. PPDE treatment on chemo mechanical polished (CMP) surface shows no significant degradation in surface roughness even with 3µm removal. On the other hand, when a mechanical polished (MP) surface was treated by PPDE, surface roughness was improved, demonstrating that PPDE can smooth a rough surface post MP process. Selective etching of threading screw dislocations (TSD) was evident from pit formation on the substrate surface. These pits may generate extended structural defects (e.g. triangular defects) during the epilayer growth depending on the sizes of the pits. No evidence was found that PPDE selectively etched BPD in the substrate and, hence, no improvement in BPD conversion was seen after epilayer growth. Ideally, PPDE treated surface pits needed to be minimized at TSD sites and mild etching at BPD sites is preferable and subject to future optimization.

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Periodical:

Materials Science Forum (Volume 1156)

Pages:

11-16

DOI:

https://doi.org/10.4028/p-Shye9P

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Online since:

September 2025

Authors:

Tawhid Rana*, Kevin Moeggenborg, Luis Reyes, Katarzyna Izabela Stokeley, Sam Johnson, Ed Sanchez

Keywords:

Plasma Etching, PPDE, Silicon Carbide Epitaxy, Surface Preparation

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* - Corresponding Author

References

[1] Yi Zhang, Linfeng Zhang, Keyu Chen, Dianzi Liu, Dong Lu1 and Hui Deng, International Journal of Extreme Manufacturing 3, 11 (2021)

Google Scholar

[2] Koji Ashida, Daichi Dojima, Yasunori Kutsuma, Satoshi Torimi, Satoru Nogami, Yasuhiko Imai, Shigeru Kimura, J. Mizuki, Noboru Ohtani & Tadaaki Kaneko, MRS Advances 1, 3697 (2016).

DOI: 10.1557/adv.2016.433

Google Scholar

[3] Kohei Toda, Daichi Dojima, Kiyoshi Kojima, Hiroshi Mihara, Shin-ichi Mitani, and Tadaaki Kaneko, Solid State Phenomena, 344, 9 (2023).

Google Scholar

[4] https://compoundsemiconductor.net/article/115806/Plasma_Polish_enables_SiC_revolution

Google Scholar

[5] Cardinaud, Christophe, Marie-Claude Peignon, and Pierre-Yves Tessier, Applied Surface Science 164.1-4 (2000): 72-83.

Google Scholar

[6] Verdonck, Patrick, Oficina de Microfabricao: Projeto e Construcao de CI's MOS, Swart, JW, Ed., Campinas (Sao Paulo, Brazil): UNICAMP (2006): 9.

Google Scholar

[7] Yasuhisa Sano, Koki Tajiri, Yuki Inoue, Risa Mukai, Yuma Nakanishi, Satoshi Matsuyama and Kazuto Yamauchi, ECS Journal of Solid State Science and Technology, Volume 10, Number 1

Google Scholar

[8] Haizheng Song, Tawhid Rana, Tangali S. Sudarshan, Journal of Crystal Growth, Volume 320, Issue 1, 2011, Pages 95-102

Google Scholar