Preface
Study on Homoepitaxy Performance of Engineered 150 mm and 200 mm SiC Substrates in a Multi-Wafer Batch Reactor
p.1
p.1
A Study of Epitaxial Growth on 4H-SiC Substrates Treated by Plasma Polish Dry Etch (PPDE) Process
p.11
p.11
Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates
p.17
p.17
Lab-Based X-Ray Topography Characterization of Axial Samples from 4H-SiC Boules Grown by PVT Method
p.27
p.27
New Insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
p.37
p.37
Process Gas Control for High-Resistance HPSI-SiC Growth
p.43
p.43
High-Temperature Adhesive Bonding of 4H-SiC Substrates
p.49
p.49
New Insights into the Occurrence of Prismatic Slip during PVT Growth of SiC Crystals
p.57
p.57
Study on Homoepitaxy Performance of Engineered 150 mm and 200 mm SiC Substrates in a Multi-Wafer Batch Reactor
Abstract:
Engineered SiC wafers with a thin 4H-SiC layer bonded on a polycrystalline carrier substrate for the application as substrate in epitaxy are investigated. Epitaxial layers grown on such substrates in 150 mm and 200 mm diameter are compared to those on state-of-the-art conventional substrates from different vendors. The performance of the engineered wafers is judged by doping and thickness uniformities as well as the number and statistics of killer defects in the epitaxial layer.
You have full access to the following eBook
Info:
Periodical:
Materials Science Forum (Volume 1156)
Pages:
1-9
Citation:
Online since:
September 2025
Authors:
Permissions:
Share:
Citation: