Lab-Based X-Ray Topography Characterization of Axial Samples from 4H-SiC Boules Grown by PVT Method

Yafei Liu; Campbell Bouch; Pete Schunemann; Ryan Philpott; Mary Safko; Danielle Hamann; Mason Dupre; Andrew Goldberg

doi:10.4028/p-F06BzD

Paper Titles

Preface

Study on Homoepitaxy Performance of Engineered 150 mm and 200 mm SiC Substrates in a Multi-Wafer Batch Reactor
p.1

A Study of Epitaxial Growth on 4H-SiC Substrates Treated by Plasma Polish Dry Etch (PPDE) Process
p.11

Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates
p.17

Lab-Based X-Ray Topography Characterization of Axial Samples from 4H-SiC Boules Grown by PVT Method
p.27

New Insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
p.37

Process Gas Control for High-Resistance HPSI-SiC Growth
p.43

High-Temperature Adhesive Bonding of 4H-SiC Substrates
p.49

New Insights into the Occurrence of Prismatic Slip during PVT Growth of SiC Crystals
p.57

HomeMaterials Science ForumMaterials Science Forum Vol. 1156Lab-Based X-Ray Topography Characterization of...

Lab-Based X-Ray Topography Characterization of Axial Samples from 4H-SiC Boules Grown by PVT Method

Abstract:

Axial sliced samples from 4H-SiC boules grown by PVT method were characterized by lab-based X-ray topography systems. Valuable information about dislocation behaviors during crystal growth was revealed. TSD/TMD propagation during PVT growth was studied. The different TSD/TMD propagation directions inside and outside the facet region were identified as the direct cause of the reduced TSD/TMD density at the facet boundary on some c-plane wafers. A defect reduction mechanism was proposed based on this discovery. It was observed that TSDs/TMDs were emitted by a void structure formed during crystal growth, which explained the elevated TSD/TMD density in the center regions of some wafers. The formation mechanism of such defect is different from the previous studies and remains under investigation.

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Periodical:

Materials Science Forum (Volume 1156)

Pages:

27-35

DOI:

https://doi.org/10.4028/p-F06BzD

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Online since:

September 2025

Authors:

Yafei Liu*, Campbell Bouch, Pete Schunemann, Ryan Philpott, Mary Safko, Danielle Hamann, Mason Dupre, Andrew Goldberg

Keywords:

Characterization, Crystal Growth, Defects, PVT, SiC, X-Ray Topography

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Creative Commons CC BY 4.0

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* - Corresponding Author

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