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Enhancing Transparent Resistive Switching Performance of MgO via Oxygen Flow Modulation

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Abstract:

Transparent resistive random-access memory (T-RRAM) is a key technology for next-generation optoelectronic devices. MgO, with its high transparency and stability, is a promising switching layer, but its performance is strongly influenced by oxygen vacancies. This study explores the effect of oxygen flow modulation during deposition on MgO-based T-RRAM. X-ray photoelectron spectroscopy (XPS) confirms that optimizing oxygen flow reduces excess vacancies while maintaining necessary defect sites for stable switching. Electrical measurements indicate that an oxygen flow of 20 sccm results in an ON/OFF ratio exceeding 103, along with enhanced retention characteristics. These findings demonstrate that oxygen flow control is an effective method for enhancing MgO-based T-RRAM, paving the way for its integration into transparent electronic systems.

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Periodical:

Materials Science Forum (Volume 1162)

Pages:

53-58

DOI:

https://doi.org/10.4028/p-1KGiTz

Citation:

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Online since:

October 2025

Authors:

Cheng Hao Yen*, Chun Chieh Lin

Keywords:

MgO, Non-Volatile, Oxygen Flow, Transparent Resistive Random Access Memory (T-RRAM)

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© 2025 Trans Tech Publications Ltd. All Rights Reserved

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