Extended Study of High-Energy Irradiation Effect on Majority Current Carriers Mobility in n- and p-Type Silicon Crystals

Abstract:

To understand the kinetics of changes in the majority current carriers Hall mobility temperature-dependency (in the temperature range of 77–300 K) in n- and p-type silicon crystals irradiated with high doses of high-energy particles during isochronous annealing, there are investigated P-doped n-Si samples irradiated with 25 MeV protons with dose of 8.1·10¹² cm^–2 at flux density of 1.5∙10¹¹ cm^–2·s^–1 and B-doped p-Si samples irradiated with 8 MeV electrons with dose of 1.0·10¹⁵ cm^–2 at flux density of 5.0·10¹² cm^–2·s^–1 at room temperature. Their isochronous annealing is performed in the temperature range of 80–500°C. The oscillatory character of the change in the majority current carriers Hall mobility in process of isochronous annealing of irradiated silicon samples is explained by the formation of disordered regions and the changes in degree of screening of their electric field potential barriers depending on charge states of nonequilibrium vacancies induced by irradiation.

• Periodical: Materials Science Forum (Volume 1166)
• Pages: 107-112
• DOI: https://doi.org/10.4028/p-X7iqC0
• Online since: November 2025
• Authors: Teimuraz Pagava*, Levan Chkhartishvili, Manana Beridze, Darejan Khocholava, Marina Shogiradze, Nona Esiava, Lali Turiashvili
• Keywords: Disordered Region, Irradiation, Mobility, Radiation Defect, Silicon

References

[1] T. Pagava, L. Chkhartishvili, M. Beridze, D. Khocholava, M. Shogiradze, R. Esiava, Qualitative model of electrical conductivity of irradiated semiconductor, IgMin Res. STEM 2 (2024) 199-212.

[2] G.K. Wertheim, Neutron-bombardment damage in silicon, Phys. Rev. 111 (1958) 1500-1505.

DOI: 10.1103/physrev.111.1500

[3] B.R. Gossick, Disordered regions in semiconductors bombarded by fast neutrons, J. Appl. Phys. 30 (1959) 1214-1218.

DOI: 10.1063/1.1735295

[4] N.A. Ukhin, Model of disordered regions in Si created by fast neutrons, Sov. Phys. Semicond. 6 (1972) 931-934.

[5] V.I. Kuznetsov, P.F. Lugakov, Effect of temperature of irradiation with 640 MeV protons on radiation defects formation of in n-type silicon, Sov. Phys. Semicond. 14 (1980) 1924-1927.

[6] V.I. Kuznetsov, P.F. Lugakov, Formation and parameters of defects cluster regions in silicon irradiated with protons and neutrons, Bull. Belarusian State Univ. (Ser. 1: Phys. Math. Mech.) 3 (1984) 24-28.

[7] T.A. Pagava, N.I. Maisuradze, Anomalous scattering of electrons in n-Si crystals irradiated with protons, Semicond. 44 (2010) 151-154.

DOI: 10.1134/s1063782610020041

[8] T.A. Pagava, The effect of the charge state of nonequilibrium vacancies on the nature of radiation defects in n-Si crystals, Semicond. 39 (2005) 400-401.

DOI: 10.1134/1.1900251

[9] T.A. Pagava, N.I. Maisuradze, M.G. Beridze, Effect of a high-energy proton-irradiation dose on the electron mobility in n-Si crystals, Semicond. 45 (2011) 572-576.

DOI: 10.1134/s106378261105023x

[10] T.A. Pagava, A study of recombination centers in irradiated p-Si crystals, Semicond. 38 (2004) 639-643.

DOI: 10.1134/1.1766363