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Electronic Structure of Gallium Nitride during Sodium Adsorption

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Abstract:

The electronic structure of ultrathin Na/GaN interfaces was studied using photoelectron spectroscopy with synchrotron radiation in the photon energy range of 75–770 eV. The experiments were carried out in situ in ultrahigh vacuum of 5·10–10 Torr with submonolayer sodium coverages on the gallium nitride surface. The photoemission spectra of the Ga 3d and N 1s core levels were studied at different excitation energies. It was found that Na adsorption causes a decrease in the intensity and a shift in the spectra of the Ga 3d and N 1s core levels towards higher binding energies. It was found that the sodium adsorption leads to some changes in the spectra due to charge transfer between the Na adlayer and the surface Ga or N atoms.

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Periodical:

Materials Science Forum (Volume 1166)

Pages:

93-98

DOI:

https://doi.org/10.4028/p-RI63yP

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Online since:

November 2025

Authors:

Galina Benemanskaya, Georgi Iluridze, Mikhail Lapushkin, Tamaz Minashvili, Andrey Mizerov, Sergei Timoshnev*

Keywords:

Adsorption, GaN, Interface, Molecular Beam Epitaxy, Photoelectron Spectroscopy, Sodium

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© 2025 Trans Tech Publications Ltd. All Rights Reserved

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* - Corresponding Author

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