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Vols. 248-249

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HomeMaterials Science ForumMaterials Science Forum Vols. 248-249

Materials Science Forum Vols. 248-249

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.248-249

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Table of Contents

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Paper Title Page

Ion-Beam Modification of Semiconductors and Related Electronic Materials

Authors: R.G. Elliman

67

Ion Beam Induced Epitaxial Crystallization of Buried SiC Layers in Silicon

Authors: J.K.N. Lindner, K. Volz, B. Stritzker

73

Ion Beam Induced Epitaxial Regrowth and Interfacial Amorphization of Compound Semiconductors

Authors: E. Glaser, T. Fehlhaber, Robert Schulz, T. Bachmann

79

Effects of Ion Irradiation on Ferromagnetic Thin Films

Authors: J.E.E. Baglin, M.H. Tabacniks, R. Fontana, A.J. Kellock, T.T. Bardin

87

Special Surface Structures in Surface Alloy Growth

Authors: D.J. O'Connor, J. Yao, Yao Gen Shen

95

Charge Carrier Lifetime Modificaiton in Silicon by High Energy H⁺, He⁺ Ion Implantation

Authors: N.Q. Khánh, P. Tüttö, E.N. Jároli, O. Buiu, L.P. Biró, F. Pászti, T. Mohácsy, C. Kovacsics, A. Manuaba, J. Gyulai

101

Range Parameters of Aluminium Implanted Targets

Authors: M. Hayes, E. Friedland, T. Hauser

107

Identifitcation of Bandgap States in Semiconductors by Transmutation of Implanted Radioactive Tracers

Authors: N. Achtziger

113

Hall Effect Measurements on Transmutation Doped Semiconductors

Authors: G. Rohrlack, Kristian Freitag, Ch. von Nathusius, R. Vianden, Russell Gwilliam, Brian J. Sealy

119

Characterization of Cu/Al₂O₃ Interfaces after Heavy Ion Irradiation

Authors: K. Neubeck, M. Rodewald, R. Riemenschneider, D.M. Rück, H. Baumann, Horst Hahn, Adam G. Balogh

125

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