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Vols. 248-249
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Vol. 247
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Vols. 243-245
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Materials Science Forum Vols. 248-249

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.248-249

ToC:

Table of Contents

Paper Title Page

Application of High Energy Ion Beams for Local Lifetime Control in Silicon
Authors: Pavel Hazdra, Jan Vobecký
225
Ion Implantation Induced Damage Accumulation Studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry
Authors: T. Lohner, N.Q. Khánh, P. Petrik, M. Fried, E. Kótai, J. Gyulai
229
Plasma Immersion Ion Implantation of Nitrogen into Porous Silicon Layers
Authors: A. Manuaba, I. Pintér, E. Szilágyi, Gábor Battistig, C. Ortega, A. Grosman, G. Amsel
233
Formation of Buried SiC Layers in Silicon by Ion Beam Synthesis
Authors: K. Volz, J.K.N. Lindner, B. Stritzker
237
Lattice Damage of Relaxed Si1-xGex Alloys of Various Composition Implanted with 2 MeV Si Ions
Authors: J.K.N. Lindner
241
Auger Depth Profiling with Good Depth Resolution of Low Energy Implantation Induced Ion Mixing
Authors: A. Sulyok, A. Galisova, M. Menyhard
245
Defect Formation by Low Energy Ions during Sputter Deposition of TiW and Au on Epitaxially Grown n-Si at Different Plasma Pressures
Authors: Prakash N.K. Deenapanray, F. Danie Auret, G. Myburg, M. Hayes, W.E. Meyer, C. Schutte
249
Pulsed Electron Beam Annealing of GaAs after High Dose Implantation of Hydrogen
Authors: T. Hauser, L. Bredell, H. Gaigher, H. Alberts, A. Botha, M. Hayes, E. Friedland
253
Dose Rate and Temperature Dependence of the Crystallization Rate during IBIEC in InAs
Authors: Robert Schulz, T. Fehlhaber, E. Glaser, F. Schrempel
257
Damage Production in Ion Implanted III-V Compounds: A Comparative Study
Authors: Elke Wendler
261

Showing 41 to 50 of 88 Paper Titles

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