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EL2 Induced Enhancement of the Donor Acceptor Pair Luminescence in GaAs
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ODMR Investigation of Proton Irradiated GaAs
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Uniaxial-Stress Symmetry Studies on the E1, E2 and E3 Irradiation-Induced Defects in Gallium Arsenide
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Observation of Persistent Electron Capture in...

Observation of Persistent Electron Capture in N-Type Gallium Arsenide Studied by Optically Detected Magnetic Resonance

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1015-1020

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1015

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Online since:

December 1997

Authors:

K. Krambrock, M.V.B. Pinheiro, K.H. Wietzke, Johann Martin Spaeth

Keywords:

EL2, GaAs, Intrinsic Defect, Metastability, ODMR

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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