Paper Titles

Defects in Thick Epitaxial GaAs Layers
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Effects of Copper Diffusion on the Native Defect EL2 in GaAs
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EL2 Induced Enhancement of the Donor Acceptor Pair Luminescence in GaAs
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Observation of Persistent Electron Capture in N-Type Gallium Arsenide Studied by Optically Detected Magnetic Resonance
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ODMR Investigation of Proton Irradiated GaAs
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Uniaxial-Stress Symmetry Studies on the E1, E2 and E3 Irradiation-Induced Defects in Gallium Arsenide
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Magnetic Resonance and Positron Annihilation of Intrinsic Acceptors in ITC-Treated GaAs
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Defects in Neutron Irradiated, LEC Semi-Insulating GaAs
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Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263ODMR Investigation of Proton Irradiated GaAs

ODMR Investigation of Proton Irradiated GaAs

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1021-1026

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1021

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Online since:

December 1997

Authors:

S.A. Goodman, F.K. Koschnick, Ch. Weber, Johann Martin Spaeth, F. Danie Auret

Keywords:

Arsenic Antisites, Defect, EL2, GaAs, MCDA-EPR, Proton Irradiation

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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